公开(公告)号：US3179541A

公开(公告)日：1965-04-20

申请号：US24852062

申请日：1962-12-31

Applicant: IBM

Inventor： HULL EDWARD M ,  LYONS VINCENT J

IPC: H01L21/205

CPC classification number: H01L21/0262 ,  H01L21/02546 ,  H01L21/02581

公开(公告)号：US3065113A

公开(公告)日：1962-11-20

申请号：US82395059

申请日：1959-06-30

Applicant: IBM

Inventor： LYONS VINCENT J

IPC: C30B19/04 ,  C30B19/10 ,  C30B25/02 ,  C30B25/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/363 ,  H01L29/00

CPC classification number: H01L21/00 ,  C30B19/04 ,  C30B19/106 ,  C30B25/02 ,  C30B25/18 ,  C30B29/08 ,  C30B29/10 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/00 ,  Y10S148/022 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/17

Abstract: 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.

公开(公告)号：US2954308A

公开(公告)日：1960-09-27

申请号：US66161757

申请日：1957-05-27

Applicant: IBM

Inventor： LYONS VINCENT J

IPC: H01L21/00 ,  H01L29/167

CPC classification number: H01L29/167 ,  H01L21/00 ,  Y10S438/918

公开(公告)号：US3302998A

公开(公告)日：1967-02-07

申请号：US12855861

申请日：1961-08-01

Applicant: IBM

Inventor： COMPTON DINSDALE M J ,  LYONS VINCENT J ,  MCDADE PATRICIA J

IPC: C30B25/08

CPC classification number: C30B25/08 ,  Y10S420/903

公开(公告)号：US3093517A

公开(公告)日：1963-06-11

申请号：US82397359

申请日：1959-06-30

Applicant: IBM

Inventor： LYONS VINCENT J

IPC: C30B19/04 ,  C30B19/10 ,  C30B25/02 ,  C30B25/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/363 ,  H01L29/00

CPC classification number: H01L21/00 ,  C30B19/04 ,  C30B19/106 ,  C30B25/02 ,  C30B25/18 ,  C30B29/08 ,  C30B29/10 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/00 ,  Y10S148/022 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/17

Abstract: 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.

公开(公告)号：US2997590A

公开(公告)日：1961-08-22

申请号：US82324759

申请日：1959-06-26

Applicant: IBM

Inventor： LYONS VINCENT J ,  SILVEY GENE A ,  TURNER WILLIAM J

IPC: G02B5/20

CPC classification number: G02B5/207

公开(公告)号：US3658606A

公开(公告)日：1972-04-25

申请号：US3658606D

申请日：1969-04-01

Applicant: IBM

Inventor： LYONS VINCENT J ,  SANDHU JAGTAR S

IPC: C23C16/44 ,  C30B31/06 ,  C30B31/16 ,  H01L21/22 ,  H01L21/223 ,  H01L7/36 ,  H01L7/44

CPC classification number: H01L21/2225 ,  C30B31/165 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/049 ,  Y10S148/122 ,  Y10S252/951

Abstract: A homogeneous diffusion source and method of producing wherein a semiconductor dopant material and a finely divided semiconductor material are introduced into a capsule in spaced relation, the capsule evacuated, and the capsule introduced into a multiplezone furnace. The temperature of the semiconductor material and the dopant material are maintained until equilibrium is substantially achieved.

Abstract translation: 均匀扩散源及其制造方法，其中将半导体掺杂剂材料和细碎半导体材料以间隔的关系引入胶囊中，将胶囊排空，将胶囊引入多区域炉中。 保持半导体材料和掺杂剂材料的温度，直至基本达到平衡。

公开(公告)号：US3580732A

公开(公告)日：1971-05-25

申请号：US3580732D

申请日：1968-01-15

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  GUKELBERGER THOMAS F JR ,  LYONS VINCENT J

IPC: C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  B44D1/02

CPC classification number: C30B29/60 ,  C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S148/17

Abstract: A METHOD FOR SELECTIVELY GROWING SINGLE CRYSTAL ISLANDS IN A DIELECTRIC SUBSTRATE AND THE RESULTING STRUCTURE. THE SUBSTRATE HAS RECESSES FORMED IN ITS SURFACE TO RECEIVE BODIES THEREIN. BY APPLYING A TEMPERATURE GRADIENT ACROSS EACH OF THE BODIES THROUGOUT THE ENTIRE HEATING CYCLE, NUCLEATION OCCURS ONLY AT A BOTTOM POINT ON EACH OF THE

BODIES WHEN A VAPOR CONTAINING THE MATERIAL TO BE NUCLEATED IS PASSED OVER THE BODIES WITH THE MATERIAL OF THE BODIES BEING MOLTEN.

公开(公告)号：US3198606A

公开(公告)日：1965-08-03

申请号：US8406661

申请日：1961-01-23

Applicant: IBM

Inventor： LYONS VINCENT J

IPC: C30B15/12

CPC classification number: C30B15/12 ,  Y10T117/1024

公开(公告)号：US3145125A

公开(公告)日：1964-08-18

申请号：US12340661

申请日：1961-07-10

Applicant: IBM

Inventor： LYONS VINCENT J

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205

CPC classification number: H01L21/00 ,  C30B25/02 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  Y10S148/049 ,  Y10S148/056 ,  Y10S148/063 ,  Y10S148/065 ,  Y10S148/097 ,  Y10S438/925 ,  Y10S438/935 ,  Y10S438/971