公开(公告)号：US3562536A

公开(公告)日：1971-02-09

申请号：US3562536D

申请日：1968-08-30

Applicant: IBM

Inventor： BRUNNER ROLF H ,  WOODARD OLLIE C

IPC: G06K7/10 ,  G06K9/18 ,  H01L23/544 ,  G08C9/06

CPC classification number: G06K7/10871 ,  G06K9/183 ,  H01L23/544 ,  H01L2223/54413 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Placement of coded indicia as etched lines in the kerf area of a semiconductor wafer. Scanning and image rotation are used to read out the indicia, which may be binary or frequency coded. Placement of the etched lines at a different angle from the circuit lines allows illumination of the etched lines with minimum interference from the circuit lines.

公开(公告)号：US3900736A

公开(公告)日：1975-08-19

申请号：US43758574

申请日：1974-01-28

Applicant: IBM

Inventor： MICHAIL MICHEL S ,  WOODARD OLLIE C ,  YOURKE HANNON S

IPC: H05K3/00 ,  H01J37/147 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  H01J37/00

CPC classification number: H01J37/147 ,  H01J37/3045

Abstract: A beam of charged particles is stepped from one predetermined position to another to form a desired pattern on a semiconductor wafer to which the beam is applied in accordance with a predetermined pattern. Instead of the beam being stepped to each of the predetermined positions, there is a dynamic correction for the deviation of the actual position from its predetermined position so that the beam is applied to the deviated position rather than the predetermined position whereby the pattern is written within the boundaries of the writing field as determined by the location of four registration marks, which are in four separate positions or points in the field. Through location of each of the four registration marks, the writing field is precisely defined. Writing fields may be interconnected by the sharing of registration marks enabling the construction of chips which are larger than a single writing field.

公开(公告)号：US3894271A

公开(公告)日：1975-07-08

申请号：US39336573

申请日：1973-08-31

Applicant: IBM

Inventor： PFEIFFER HANS C ,  WOODARD OLLIE C

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/304 ,  H01L21/027 ,  H01J29/52 ,  B23K9/00

CPC classification number: H01J37/1471 ,  H01J37/244 ,  H01J37/3045 ,  H01J2237/2446 ,  H01J2237/24507

Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. During various times, e.g., the target stage is moving mechanically from one chip to the next one, the electron beam is blanked. The blanking aperture plate in the electron beam column is provided with a second sensing aperture. During a blanked phase, the condensor lens images the electron source on the sensing aperture of the blanking aperture plate. A sensing plate disposed beneath the blanking aperture monitors the beam current and provides a signal to an alignment servo. Error correction is carried out by moving the beam in small increments in two orthogonal directions until the sensing plate reads a maximum current.

Abstract translation: 方形电子束从一个预定位置到另一个位置逐步形成在施加光束的半导体晶片的每个芯片上的期望图案。 在各种时期，例如目标阶段是从一个芯片机械移动到下一个芯片，电子束被消隐。 电子束列中的消隐孔板设置有第二感测孔。 在消隐阶段期间，聚光透镜将消隐孔板的感测孔上的电子源成像。 设置在消隐孔下方的检测板监测束电流并向对准伺服提供信号。 通过在两个正交方向上以小增量移动光束进行误差校正，直到感测板读取最大电流。

公开(公告)号：US3901814A

公开(公告)日：1975-08-26

申请号：US48350974

申请日：1974-06-27

Applicant: IBM

Inventor： DAVIS DONALD E ,  HABEGGER MILLARD A ,  MOORE RICHARD D ,  WEBER EDWARD V ,  WOODARD OLLIE C

IPC: G05D3/12 ,  H01J37/304 ,  H01L21/027 ,  H01J37/00

CPC classification number: H01J37/304

Abstract: A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression or a rise in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced from a pair of diode detectors located with their surfaces orthogonal to the direction of the beam scan and a negative peak signal is produced when the beam passes over the other edge of the mark. The amplitudes of these peak signals are balanced so that they are substantially the same irrespective of the location of each of the diode detectors relative to the mark in comparison with the location of the other of the diode detectors relative to the mark. These peak signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the marks to be determined. The positive and negative threshold signals are set during the prior scan with the scans being in opposite directions. The peak to peak amplitude across the registration mark in a particular area is sampled during the first scan and used to provide an automatic gain factor for the remainder of the scans across the mark so that a substantially constant peak amplitude signal is transmitted to the comparators.

公开(公告)号：US3875415A

公开(公告)日：1975-04-01

申请号：US43743474

申请日：1974-01-28

Applicant: IBM

Inventor： WOODARD OLLIE C

IPC: H05K3/00 ,  G06T1/00 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  H01L21/68 ,  H01J37/00

CPC classification number: H01J37/304

Abstract: A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced while a negative peak signal is produced when the beam passes over the other edge of the mark. These positive and negative signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the edges of the mark to be determined. The positive and negative threshold signals are set for each of the areas of the wafer having one of the marks since different signal baseline voltages are produced by different areas of the wafer.

Abstract translation: 一个方形的带电粒子束通过对准标记，该对准标记由半导体晶片表面的凹陷形成。 当光束通过标记的一个边缘时，产生正峰值信号，同时当光束通过标记的另一边缘时产生负峰值信号。 这些正和负信号与比较器中的正和负阈值信号进行比较，其中当其阈值信号被交叉时，从每个比较器产生输出信号。 这使得能够确定标记的每个边缘的位置。 由于晶片的不同区域产生不同的信号基线电压，因此为具有一个标记的晶片的每个区域设置正阈值信号和负阈值信号。

公开(公告)号：US3644700A

公开(公告)日：1972-02-22

申请号：US3644700D

申请日：1969-12-15

Applicant: IBM

Inventor： KRUPPA ROBERT W ,  WEBER EDWARD V ,  WOODARD OLLIE C

IPC: H01J37/30 ,  G05B19/39 ,  H01J37/304 ,  H01L21/00 ,  H01L21/027 ,  B23K9/08

CPC classification number: H01J37/3045 ,  G05B19/39 ,  G05B2219/42251 ,  H01L21/00

Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. For each chip to which the beam is applied, the position of the chip relative to a predetermined position is determined and the distance in these positions is utilized to control the position of the electron beam to insure that the desired pattern is formed on each of the chips separately. Furthermore, the position of the beam is periodically checked against a calibration grid to ascertain any deviations in the beam from its initial position. These differences are applied to properly position the beam.