公开(公告)号：US20190205768A1

公开(公告)日：2019-07-04

申请号：US16224496

申请日：2018-12-18

Applicant: IMEC vzw

Inventor： Tim Stakenborg ,  Chang Chen ,  Kris Covens ,  Qing Cai ,  Maarten Fauvart

IPC: G06N3/12 ,  G11C13/00 ,  G11C11/00

CPC classification number: G06N3/123 ,  B82Y10/00 ,  G16B30/00

Abstract: A method for writing data including a sequence of bits, the data being written in a form of DNA, by in-vitro enzymatically producing memory DNA from a strand of memory writing substrate DNA is disclosed. In one aspect, the method includes repeating of: receiving a sub-sequence of the sequence of bits, the sub-sequence including at least one bit; selecting memory nucleotides based on the sub-sequence; contacting, in liquid medium including the strand of memory writing substrate DNA contacted with an enzyme, the selected memory nucleotides and the enzyme; and synthesizing a portion of the memory DNA from a portion of the strand of memory writing substrate DNA by the enzyme and at least one of the memory nucleotides of the solution, thereby producing memory DNA including memory nucleotides corresponding to bits of the sequence of bits. The disclosed technology further relates to a micro-fluidic system including a microfluidic chip and a controller.

公开(公告)号：US11276003B2

公开(公告)日：2022-03-15

申请号：US16224496

申请日：2018-12-18

Applicant: IMEC vzw

Inventor： Tim Stakenborg ,  Chang Chen ,  Kris Covens ,  Qing Cai ,  Maarten Fauvart

IPC: G06N3/12 ,  G11C11/00 ,  G16B30/00 ,  B82Y10/00 ,  C12N15/10 ,  G11C13/00

Abstract: A method for writing data including a sequence of bits, the data being written in a form of DNA, by in-vitro enzymatically producing memory DNA from a strand of memory writing substrate DNA is disclosed. In one aspect, the method includes repeating of: receiving a sub-sequence of the sequence of bits, the sub-sequence including at least one bit; selecting memory nucleotides based on the sub-sequence; contacting, in liquid medium including the strand of memory writing substrate DNA contacted with an enzyme, the selected memory nucleotides and the enzyme; and synthesizing a portion of the memory DNA from a portion of the strand of memory writing substrate DNA by the enzyme and at least one of the memory nucleotides of the solution, thereby producing memory DNA including memory nucleotides corresponding to bits of the sequence of bits. The disclosed technology further relates to a micro-fluidic system including a microfluidic chip and a controller.

公开(公告)号：US11276481B2

公开(公告)日：2022-03-15

申请号：US17040036

申请日：2019-03-22

Applicant: IMEC VZW

Inventor： Tim Stakenborg ,  Chang Chen ,  Kris Covens ,  Qing Cai ,  Maarten Fauvart

IPC: G16B50/00 ,  C12Q1/6869 ,  G06N3/12

Abstract: The present invention relates to a method for writing data comprising a sequence of bits, the data being written in a form of nucleic acid, by in-vitro enzymatically producing memory nucleic acid from a strand of memory writing substrate nucleic acid, wherein the strand of memory writing substrate nucleic acid comprises a plurality of spacer sections and memory writing sections sandwiched between the spacer sections. Each of the spacer sections comprises one or more nucleobases, and each of the memory writing sections comprises a nucleobase other than the nucleobases of an adjacent spacer section upstream of the memory writing section in a travel direction of an enzyme along the strand of memory writing substrate nucleic acid. The method comprising: repeating of: synthesising, in liquid medium comprising the strand of memory writing substrate nucleic acid contacted with the enzyme, a spacer portion of the memory nucleic acid from a spacer section by the enzyme by contacting with a solution of spacer nucleotides compatible with the nucleobases of the spacer section; halting the synthesising of the spacer portion in a position where the enzyme is reaching the memory writing section resulting from incompatibility between spacer nucleotides and nucleobases of the portion of the memory nucleic acid from the memory writing section; receiving a sub-sequence of the sequence of bits, said sub-sequence comprising at least one bit; selecting a memory nucleotide compatible with the nucleobase of the memory writing section, and comprising a first label or first modification, on a condition that said sub-sequence comprises a predetermined first sequence of bit-values, and selecting a memory nucleotide compatible with the nucleobase of the memory writing section, and comprising a second label or second modification, on a condition that said sub-sequence comprises a predetermined second sequence of bit-values; and subsequent to the halting, synthesising, in the liquid medium comprising the strand of memory writing substrate nucleic acid contacted with the enzyme, a memory portion of the memory nucleic acid from the memory writing section by the enzyme by contacting the enzyme with a solution of the selected memory nucleotide.

公开(公告)号：US20190271660A1

公开(公告)日：2019-09-05

申请号：US16292139

申请日：2019-03-04

Applicant: IMEC vzw

Inventor： Boon Teik Chan ,  Zheng Tao ,  Jean-Francois de Marneffe ,  Chang Chen

IPC: G01N27/414 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  G01N33/487 ,  C12Q1/6869

Abstract: The disclosed technology generally relates to a method of forming a nanoscale opening in a semiconductor structure, and more particularly to forming a nanoscale opening that can be used for sensing the presence of polymers, e.g., the individual bases of deoxyribonucleic acid (DNA) or ribonucleic acid (RNA). In one aspect, a method of forming a nanopore in a semiconductor fin includes providing a fin structure comprising a bottom layer and a top layer, pattering the top layer to form a pillar, and laterally embedding the pillar in a filler material. The method additionally includes forming an aperture in the filler material by removing the pillar, and forming the nanopore in the bottom layer by etching through the aperture. In another aspect, a semiconductor fin is fabricated using the method.

公开(公告)号：US11367797B2

公开(公告)日：2022-06-21

申请号：US16761712

申请日：2018-07-24

Applicant: IMEC VZW

Inventor： Chang Chen ,  Koen Martens ,  Pol Van Dorpe ,  Simone Severi

IPC: H01L21/00 ,  H01L29/786 ,  G01N27/414 ,  H01L21/308 ,  H01L29/10 ,  H01L29/51

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

公开(公告)号：US20210184053A1

公开(公告)日：2021-06-17

申请号：US16761712

申请日：2018-07-24

Applicant: IMEC VZW

Inventor： Chang Chen ,  Koen Martens ,  Pol Van Dorpe ,  Simone Severi

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/10 ,  H01L21/308 ,  G01N27/414

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.