公开(公告)号：US20140185174A1

公开(公告)日：2014-07-03

申请号：US13900546

申请日：2013-05-23

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H02H3/20

CPC classification number: H02H3/20 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2924/0002 ,  H03K19/018521 ,  H01L2924/00 ,  H01L2924/00011

Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.

Abstract translation: 提供半导体装置的TSV双向修复电路。 双向修复电路包括第一和第二双向开关和至少两个传输路径模块。 第一和第二双向开关根据开关信号确定是否向每个传输路径模块发送第一芯片或第二芯片的输入信号。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路根据输入信号和对应的TSV检测是否存在对应的TSV和硅衬底的短路以产生短路检测输出信号。

公开(公告)号：US20140184322A1

公开(公告)日：2014-07-03

申请号：US13902988

申请日：2013-05-28

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H01L23/48 ,  H01L25/065

CPC classification number: H01L25/0657 ,  H01L2225/06544 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.

Abstract translation: 提供了硅通孔（TSV）修复电路。 TSV修复电路包括至少两个传输控制开关和至少两个传输路径模块。 两个传输控制开关根据开关信号将第一芯片或第二芯片的输入信号发送到每个传输路径模块中的两个终端中的一个终端。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路检测是否检测出TSV上的短路和硅衬底是否存在，并产生短路检测输出信号。 泄漏电流消除电路，以避免由第一电平电压产生的漏电流根据短路检测输出信号流入硅衬底。

公开(公告)号：US09136250B2

公开(公告)日：2015-09-15

申请号：US13902988

申请日：2013-05-28

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H03K19/003 ,  H01L25/065

CPC classification number: H01L25/0657 ,  H01L2225/06544 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.

Abstract translation: 提供了硅通孔（TSV）修复电路。 TSV修复电路包括至少两个传输控制开关和至少两个传输路径模块。 两个传输控制开关根据开关信号将第一芯片或第二芯片的输入信号发送到每个传输路径模块中的两个终端中的一个终端。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路检测是否检测出TSV上的短路和硅衬底是否存在，并产生短路检测输出信号。 泄漏电流消除电路，以避免由第一电平电压产生的漏电流根据短路检测输出信号流入硅衬底。

公开(公告)号：US09059586B2

公开(公告)日：2015-06-16

申请号：US13900546

申请日：2013-05-23

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H02H3/00 ,  H02H3/20

CPC classification number: H02H3/20 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2924/0002 ,  H03K19/018521 ,  H01L2924/00 ,  H01L2924/00011

Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.

Abstract translation: 提供半导体装置的TSV双向修复电路。 双向修复电路包括第一和第二双向开关和至少两个传输路径模块。 第一和第二双向开关根据开关信号确定是否向每个传输路径模块发送第一芯片或第二芯片的输入信号。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路根据输入信号和对应的TSV检测是否存在对应的TSV和硅衬底的短路以产生短路检测输出信号。

公开(公告)号：US20140145753A1

公开(公告)日：2014-05-29

申请号：US13867122

申请日：2013-04-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H03K19/003

CPC classification number: H03K19/003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.

Abstract translation: 提供半导体装置的硅通孔（TSV）修复电路。 TSV修复电路包括第一芯片，至少一个第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，短路检测电路，偏置电路和泄漏电流消除电路。 输入驱动电路将输入信号变换为未决信号，并将未决信号发送到相应TSV的第一终端。 短路检测电路根据输入信号和TSV的第一端检测相应的TSV与硅衬底之间的短路，并产生短路检测输出信号。 泄漏电流消除电路防止由第一电平电压产生的漏电流根据短路检测输出信号进入硅衬底。

公开(公告)号：US09136843B2

公开(公告)日：2015-09-15

申请号：US14447531

申请日：2014-07-30

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su ,  Chih-Sheng Lin ,  Shyh-Shyuan Sheu

IPC: H03K19/00 ,  H03K19/003 ,  G01R31/28 ,  H01L21/66

CPC classification number: H03K19/003 ,  G01R31/28 ,  H01L22/22 ,  H01L23/481 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H03K19/0008 ,  H01L2924/00

Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.

Abstract translation: 半导体器件的TSV修复电路包括第一芯片，第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，TSV检测电路，存储器件，保护电路和功率控制电路。 TSV检测电路检测TSV状态，存储器件保持TSV状态，保护电路根据TSV状态确定是否将TSV的第一端拉至接地电压，并且功率控制电路防止漏电流 来自基板的电源电压。

公开(公告)号：US09219479B2

公开(公告)日：2015-12-22

申请号：US13867122

申请日：2013-04-21

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su

IPC: H03K19/00 ,  H03K19/003

CPC classification number: H03K19/003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.

Abstract translation: 提供半导体装置的硅通孔（TSV）修复电路。 TSV修复电路包括第一芯片，至少一个第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，短路检测电路，偏置电路和泄漏电流消除电路。 输入驱动电路将输入信号变换为未决信号，并将未决信号发送到相应TSV的第一终端。 短路检测电路根据输入信号和TSV的第一端检测相应的TSV与硅衬底之间的短路，并产生短路检测输出信号。 泄漏电流消除电路防止由第一电平电压产生的漏电流根据短路检测输出信号进入硅衬底。