公开(公告)号：US09391239B2

公开(公告)日：2016-07-12

申请号：US14166864

申请日：2014-01-29

Applicant: Industrial Technology Research Institute

Inventor： Yao-Jun Tsai ,  Chen-Peng Hsu ,  Shih-Yi Wen ,  Chi-Chin Yang ,  Yu-Hsiang Chang ,  Re-Ching Lin ,  Hung-Lieh Hu

IPC: H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract translation: 发光二极管包括半导体层叠结构，基板，第一电极，第二电极和第三电极。 半导体堆叠结构包括第一半导体层，第二半导体层和发光层。 第一半导体层具有彼此相对的第一表面和第二表面，并且具有第一区域和第二区域。 第二半导体层设置在第二表面上。 发光层设置在第一半导体层和第二半导体层之间。 衬底上具有第一导电层和第二导电层。 第一电极设置在第二半导体层和第一导电层之间。 第二电极设置在第一表面上。 第三电极设置在第二区域和第二导电层之间，并且电连接到第二电极。

公开(公告)号：US09231168B2

公开(公告)日：2016-01-05

申请号：US14267919

申请日：2014-05-02

Applicant: Industrial Technology Research Institute

Inventor： Re-Ching Lin ,  Shih-Yi Wen ,  Chen-Peng Hsu ,  Hung-Lieh Hu ,  Yu-Chen Yu ,  Chia-Fen Hsieh

IPC: H01L33/00 ,  H01L33/50

CPC classification number: H01L33/501

Abstract: A light-emitting diode package structure including a chip carrier portion, a light-emitting diode chip, and a package material is provided. The light-emitting diode chip is disposed on the chip carrier portion of the package. The package material is filled in the chip carrier portion and covers the light-emitting diode chip. The package material includes a matrix material, a plurality of first powder particles, and a plurality of second powder particles. The first powder particles and the second powder particles are distributed in the matrix material. Each first powder particle is a wavelength conversion material. Each second powder particle has a shell-like structure.

Abstract translation: 提供了包括芯片载体部分，发光二极管芯片和封装材料的发光二极管封装结构。 发光二极管芯片设置在封装的芯片载体部分上。 封装材料填充在芯片载体部分中并覆盖发光二极管芯片。 包装材料包括基质材料，多个第一粉末颗粒和多个第二粉末颗粒。 第一粉末颗粒和第二粉末颗粒分布在基质材料中。 每个第一粉末颗粒是波长转换材料。 每个第二粉末颗粒具有壳状结构。

公开(公告)号：US20140327025A1

公开(公告)日：2014-11-06

申请号：US14267919

申请日：2014-05-02

Applicant: Industrial Technology Research Institute

Inventor： Re-Ching Lin ,  Shih-Yi Wen ,  Chen-Peng Hsu ,  Hung-Lieh Hu ,  Yu-Chen Yu ,  Chia-Fen Hsieh

IPC: H01L33/50

CPC classification number: H01L33/501

Abstract: A light-emitting diode package structure including a chip carrier portion, a light-emitting diode chip, and a package material is provided. The light-emitting diode chip is disposed on the chip carrier portion of the package. The package material is filled in the chip carrier portion and covers the light-emitting diode chip. The package material includes a matrix material, a plurality of first powder particles, and a plurality of second powder particles. The first powder particles and the second powder particles are distributed in the matrix material. Each first powder particle is a wavelength conversion material. Each second powder particle has a shell-like structure.

Abstract translation: 提供了包括芯片载体部分，发光二极管芯片和封装材料的发光二极管封装结构。 发光二极管芯片设置在封装的芯片载体部分上。 封装材料填充在芯片载体部分中并覆盖发光二极管芯片。 包装材料包括基质材料，多个第一粉末颗粒和多个第二粉末颗粒。 第一粉末颗粒和第二粉末颗粒分布在基质材料中。 每个第一粉末颗粒是波长转换材料。 每个第二粉末颗粒具有壳状结构。

公开(公告)号：US20140231851A1

公开(公告)日：2014-08-21

申请号：US14166864

申请日：2014-01-29

Applicant: Industrial Technology Research Institute

Inventor： Yao-Jun Tsai ,  Chen-Peng Hsu ,  Shih-Yi Wen ,  Chi-Chin Yang ,  Yu-Hsiang Chang ,  Re-Ching Lin ,  Hung-Lieh Hu

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract translation: 发光二极管包括半导体层叠结构，基板，第一电极，第二电极和第三电极。 半导体堆叠结构包括第一半导体层，第二半导体层和发光层。 第一半导体层具有彼此相对的第一表面和第二表面，并且具有第一区域和第二区域。 第二半导体层设置在第二表面上。 发光层设置在第一半导体层和第二半导体层之间。 衬底上具有第一导电层和第二导电层。 第一电极设置在第二半导体层和第一导电层之间。 第二电极设置在第一表面上。 第三电极设置在第二区域和第二导电层之间，并且电连接到第二电极。