公开(公告)号：US12249292B2

公开(公告)日：2025-03-11

申请号：US18081700

申请日：2022-12-15

Applicant: Industrial Technology Research Institute

Inventor： Hui-Tang Shen ,  Wei-Hung Kuo ,  Kai-Ling Liang ,  Chun-I Wu ,  Yu-Hsiang Chang

IPC: G09G3/36 ,  G09G3/00

Abstract: A display device and a projector are provided. The display device includes a pixel light-emitting panel and multiple color conversion panels. The pixel light-emitting panel includes an N1 number of light-emitting pixel units distributed in an array, and the light-emitting pixel units are driven to emit light through a driver. A first color conversion panel includes an N2 number of first color pixels and an N3 number of first transparent pixels. The first color pixels and the first transparent pixels are disposed relative to the light-emitting pixel units. A second color conversion panel includes an N4 number of second color pixels and an N5 number of second transparent pixels. The second color pixels and the second transparent pixels are disposed relative to the light-emitting pixel units. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first color pixels and the second transparent pixels to achieve the color conversion. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first transparent pixels and the second color pixels to achieve the color conversion.

公开(公告)号：US12087612B2

公开(公告)日：2024-09-10

申请号：US17482409

申请日：2021-09-22

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Wei-Hung Kuo ,  Chu-Li Chao ,  Chu-Yin Hung ,  Yu-Hsiang Chang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L21/6835 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

公开(公告)号：US20220367230A1

公开(公告)日：2022-11-17

申请号：US17482409

申请日：2021-09-22

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Wei-Hung Kuo ,  Chu-Li Chao ,  Chu-Yin Hung ,  Yu-Hsiang Chang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62

Abstract: A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

公开(公告)号：US09391239B2

公开(公告)日：2016-07-12

申请号：US14166864

申请日：2014-01-29

Applicant: Industrial Technology Research Institute

Inventor： Yao-Jun Tsai ,  Chen-Peng Hsu ,  Shih-Yi Wen ,  Chi-Chin Yang ,  Yu-Hsiang Chang ,  Re-Ching Lin ,  Hung-Lieh Hu

IPC: H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract translation: 发光二极管包括半导体层叠结构，基板，第一电极，第二电极和第三电极。 半导体堆叠结构包括第一半导体层，第二半导体层和发光层。 第一半导体层具有彼此相对的第一表面和第二表面，并且具有第一区域和第二区域。 第二半导体层设置在第二表面上。 发光层设置在第一半导体层和第二半导体层之间。 衬底上具有第一导电层和第二导电层。 第一电极设置在第二半导体层和第一导电层之间。 第二电极设置在第一表面上。 第三电极设置在第二区域和第二导电层之间，并且电连接到第二电极。

公开(公告)号：US20150179880A1

公开(公告)日：2015-06-25

申请号：US14139880

申请日：2013-12-24

Applicant: Industrial Technology Research Institute

Inventor： Yen-Hsiang Fang ,  Rong Xuan ,  Chia-Lung Tsai ,  Yu-Hsiang Chang

IPC: H01L33/14 ,  H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: A nitride light emitting diode structure including a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first metal pad, a second metal pad and a magnetic film is disclosed. The magnetic film disposed between the first metal pad and the first type doped semiconductor layer includes a zinc oxide (ZnO) layer doped with cobalt (Co). The content of Co in the ZnO layer ranges from 5% to 25% by molar ratio.

Abstract translation: 公开了一种包括第一掺杂半导体层，第二掺杂半导体层，发光层，第一金属焊盘，第二金属焊盘和磁性膜的氮化物发光二极管结构。 设置在第一金属焊盘和第一类型掺杂半导体层之间的磁性膜包括掺杂有钴（Co）的氧化锌（ZnO）层。 ZnO层中Co的含量为5〜25摩尔％。

公开(公告)号：US20240127767A1

公开(公告)日：2024-04-18

申请号：US18081700

申请日：2022-12-15

Applicant: Industrial Technology Research Institute

Inventor： Hui-Tang Shen ,  Wei-Hung Kuo ,  Kai-Ling Liang ,  Chun-I Wu ,  Yu-Hsiang Chang

IPC: G09G3/36 ,  G09G3/00

CPC classification number: G09G3/3607 ,  G09G3/001 ,  G09G2300/023 ,  G09G2300/0452

Abstract: A display device and a projector are provided. The display device includes a pixel light-emitting panel and multiple color conversion panels. The pixel light-emitting panel includes an N1 number of light-emitting pixel units distributed in an array, and the light-emitting pixel units are driven to emit light through a driver. A first color conversion panel includes an N2 number of first color pixels and an N3 number of first transparent pixels. The first color pixels and the first transparent pixels are disposed relative to the light-emitting pixel units. A second color conversion panel includes an N4 number of second color pixels and an N5 number of second transparent pixels. The second color pixels and the second transparent pixels are disposed relative to the light-emitting pixel units. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first color pixels and the second transparent pixels to achieve the color conversion. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first transparent pixels and the second color pixels to achieve the color conversion.

公开(公告)号：US20140231851A1

公开(公告)日：2014-08-21

申请号：US14166864

申请日：2014-01-29

Applicant: Industrial Technology Research Institute

Inventor： Yao-Jun Tsai ,  Chen-Peng Hsu ,  Shih-Yi Wen ,  Chi-Chin Yang ,  Yu-Hsiang Chang ,  Re-Ching Lin ,  Hung-Lieh Hu

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract translation: 发光二极管包括半导体层叠结构，基板，第一电极，第二电极和第三电极。 半导体堆叠结构包括第一半导体层，第二半导体层和发光层。 第一半导体层具有彼此相对的第一表面和第二表面，并且具有第一区域和第二区域。 第二半导体层设置在第二表面上。 发光层设置在第一半导体层和第二半导体层之间。 衬底上具有第一导电层和第二导电层。 第一电极设置在第二半导体层和第一导电层之间。 第二电极设置在第一表面上。 第三电极设置在第二区域和第二导电层之间，并且电连接到第二电极。