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公开(公告)号:US09793119B2
公开(公告)日:2017-10-17
申请号:US15347835
申请日:2016-11-10
Applicant: Infineon Technologies AG
Inventor: Martin Mischitz , Markus Heinrici , Florian Bernsteiner
IPC: H01L21/00 , H01L21/027 , H01L21/308 , H01L21/306 , H01L21/3065 , H01L21/02
CPC classification number: H01L21/0274 , H01L21/02107 , H01L21/02203 , H01L21/0271 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/3086 , H01L21/31058 , H01L21/32139 , H01L21/47 , H01L21/70
Abstract: According to various embodiments, a method of processing a substrate may include: disposing a viscous material over a substrate including at least one topography feature extending into the substrate to form a protection layer over the substrate; adjusting a viscosity of the viscous material during a contacting period of the viscous material and the substrate to stabilize a spatial distribution of the viscous material as disposed; processing the substrate using the protection layer as mask; and removing the protection layer after processing the substrate.
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公开(公告)号:US09768023B1
公开(公告)日:2017-09-19
申请号:US14953492
申请日:2015-11-30
Applicant: Infineon Technologies AG
Inventor: Martin Mischitz , Markus Heinrici , Florian Bernsteiner
IPC: H01L21/00 , H01L21/027 , H01L21/70 , H01L21/3105 , H01L21/02 , H01L21/47
CPC classification number: H01L21/0274 , H01L21/02107 , H01L21/02203 , H01L21/0271 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/3086 , H01L21/31058 , H01L21/32139 , H01L21/47 , H01L21/70
Abstract: According to various embodiments, a method of processing a substrate may include: disposing a viscous material over a substrate including at least one topography feature extending into the substrate to form a protection layer over the substrate; adjusting a viscosity of the viscous material during a contacting period of the viscous material and the substrate to stabilize a spatial distribution of the viscous material as disposed; processing the substrate using the protection layer as mask; and removing the protection layer after processing the substrate.
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