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公开(公告)号：US20220199464A1
公开(公告)日：2022-06-23
申请号：US17128866
申请日：2020-12-21
Applicant: Infineon Technologies AG
Inventor： Stephan VOSS , Alexander BREYMESSER , Eva-Maria HOF , Mathias PLAPPERT , Carsten SCHAEFFER
IPC: H01L21/768 , H01L23/52 , H01L23/00
Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a metallic layer may be formed over a semiconductor substrate. An anti-reflective layer may be formed over the metallic layer. A passivation layer may be formed over the anti-reflective layer. An opening may be formed in the passivation layer to expose the anti-reflective layer.
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公开(公告)号：US20170125407A1
公开(公告)日：2017-05-04
申请号：US15299645
申请日：2016-10-21
Applicant: Infineon Technologies AG
Inventor： Hans-Joachim SCHULZE , Franz-Josef NIEDERNOSTHEIDE , Frank Dieter PFIRSCH , Francisco Javier SANTOS RODRIGUEZ , Stephan VOSS , Wolfgang WAGNER
IPC: H01L27/088 , H01L29/423 , H01L29/739 , H01L21/8234 , H01L27/082 , H01L29/49 , H01L29/06
CPC classification number: H01L27/088 , H01L21/823418 , H01L21/82345 , H01L21/823475 , H01L27/0629 , H01L27/082 , H01L29/0607 , H01L29/0696 , H01L29/0834 , H01L29/42376 , H01L29/4238 , H01L29/4916 , H01L29/4983 , H01L29/6634 , H01L29/66348 , H01L29/66363 , H01L29/7393 , H01L29/7396 , H01L29/7397 , H01L29/749
Abstract: A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and an electrically conductive gate layer comprising the gate electrodes or electrically connected to the gate electrodes of the plurality of device cells. The gate layer is electrically connected to a gate conductor and includes at least one of an increased resistance region and a decreased resistance region.
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公开(公告)号：US20170117394A1
公开(公告)日：2017-04-27
申请号：US15296594
申请日：2016-10-18
Applicant: Infineon Technologies AG
IPC: H01L29/739 , H01L29/08 , H01L29/15
CPC classification number: H01L29/7395 , H01L29/0623 , H01L29/0634 , H01L29/083 , H01L29/0834 , H01L29/157 , H01L29/1608 , H01L29/2003 , H01L29/7397 , H01L29/8611
Abstract: A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface of the semiconductor body. The reservoir region includes no superjunction structure or a second superjunction structure with a mean second vertical extension smaller than the first vertical extension.
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公开(公告)号：US20180158937A1
公开(公告)日：2018-06-07
申请号：US15856426
申请日：2017-12-28
Applicant: Infineon Technologies AG
IPC: H01L29/739 , H01L29/15 , H01L29/08
CPC classification number: H01L29/7395 , H01L29/0623 , H01L29/0634 , H01L29/083 , H01L29/0834 , H01L29/157 , H01L29/1608 , H01L29/2003 , H01L29/7397 , H01L29/8611
Abstract: A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. The low-resistive region includes a first superjunction structure with a first vertical extension with respect to a first surface at the front side of the semiconductor body. The reservoir region includes no superjunction structure such that the reservoir region includes the semiconductor body that extends from a region located at the first surface to a drain region.
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