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    Multi-turn counter sensor
    2.
    发明授权
    Multi-turn counter sensor 有权

    公开(公告)号：US10724844B2

    公开(公告)日：2020-07-28

    申请号：US15866206

    申请日：2018-01-09

    Applicant: Infineon Technologies AG

    Inventor： Jürgen Zimmer ,  Sebastian Luber ,  Thomas Bever ,  Hansjoerg Walter Kuemmel ,  Christian Kegler

    IPC: G01B7/30 ,  G01D5/14 ,  G01R33/09 ,  G01D5/16 ,  G01D5/06

    Abstract: An example multi-turn counter (MTC) sensor includes a magnetic strip that includes a domain wall generator located at a first end of the magnetic strip, where the domain wall generator is to generate at least one domain wall in the magnetic strip, the at least one domain wall configured to propagate based on a magnetic field caused by a magnet; wherein a location of the at least one domain wall indicates a turn count of the magnetic field of the magnet; the turn count to indicate one or more of a predefined fraction of a full rotation of the magnetic field; an end tip located at a second end of the magnetic strip, where the second end of the magnetic strip is opposite the first end; and a plurality of overlapping strip turns that cause a plurality of crossings in the magnetic strip.

    Controlling of photo-generated charge carriers
    3.
    发明授权
    Controlling of photo-generated charge carriers 有权

    公开(公告)号：US10707362B2

    公开(公告)日：2020-07-07

    申请号：US15881100

    申请日：2018-01-26

    Applicant: Infineon Technologies AG

    Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

    IPC: H01L31/0352 ,  G01S7/4914 ,  H01L27/148

    Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

    Multi-turn counter sensor failure detection
    4.
    发明授权
    Multi-turn counter sensor failure detection 审中-公开

    公开(公告)号：US10670386B2

    公开(公告)日：2020-06-02

    申请号：US15957117

    申请日：2018-04-19

    Applicant: Infineon Technologies AG

    Inventor： Jürgen Zimmer ,  Thomas Bever

    IPC: G01B7/30 ,  G01R35/00 ,  G01D5/12

    Abstract: Some aspects described herein involve a multi-turn counter (MTC) system that includes a first MTC sensor configured to sense a rotating magnetic field coupled to a rotatable object. The first MTC sensor may have a first sense of rotation detection. The MTC system may include a second MTC sensor may be configured to sense the rotating magnetic field. The second MTC sensor may have a second sense of rotation detection which is opposite to the first sense of rotation detection, and the second MTC sensor is configured to sense the rotating magnetic field according to the second sense of rotation.

    CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS
    5.
    发明申请
    CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS 审中-公开

    公开(公告)号：US20180151765A1

    公开(公告)日：2018-05-31

    申请号：US15881100

    申请日：2018-01-26

    Applicant: Infineon Technologies AG

    Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  lnes Uhlig ,  ThoraIf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

    IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

    Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

    MULTI-TURN COUNTER SENSOR
    6.
    发明申请
    MULTI-TURN COUNTER SENSOR 审中-公开

    公开(公告)号：US20190195613A1

    公开(公告)日：2019-06-27

    申请号：US15866206

    申请日：2018-01-09

    Applicant: Infineon Technologies AG

    Inventor： Jürgen Zimmer ,  Sebastian Luber ,  Thomas Bever ,  Hansjoerg Walter Kuemmel ,  Christian Kegler

    IPC: G01B7/30 ,  G01D5/14 ,  G01R33/09

    Abstract: An example multi-turn counter (MTC) sensor includes a magnetic strip that includes a domain wall generator located at a first end of the magnetic strip, where the domain wall generator is to generate at least one domain wall in the magnetic strip, the at least one domain wall configured to propagate based on a magnetic field caused by a magnet; wherein a location of the at least one domain wall indicates a turn count of the magnetic field of the magnet; the turn count to indicate one or more of a predefined fraction of a full rotation of the magnetic field; an end tip located at a second end of the magnetic strip, where the second end of the magnetic strip is opposite the first end; and a plurality of overlapping strip turns that cause a plurality of crossings in the magnetic strip.

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