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公开(公告)号：US20180026548A1
公开(公告)日：2018-01-25
申请号：US15214994
申请日：2016-07-20
Applicant: Infineon Technologies AG
Inventor： Johannes Georg Laven , Heiko Rettinger , Roman Baburske , Uwe Jansen , Thomas Basler
CPC classification number: H02M7/44 , H02M1/32 , H02M7/487 , H02M2001/0048 , H03K5/08
Abstract: A system and method for a power inverter with controllable clamps comprises a first voltage swing path, the first voltage swing path including a first plurality of power transistors, the first voltage swing path producing portions of a positive half-wave of an output signal when active; a second voltage swing path, the second voltage swing path including a second plurality of power transistors, the second voltage swing path producing portions of a negative half-wave of the output signal when active; a first clamping component coupled to the first voltage swing path, the first clamping component forming a freewheeling path for the first voltage swing path, the first clamping component comprising a control terminal, the first clamping component having a first stored charge when the control terminal is in a first state and a second stored charge when the control terminal is in a second state, the first stored charge being greater than the second stored charge; and a second clamping component coupled to the second voltage swing path, the second clamping component forming a freewheeling path for the second voltage swing path, the second clamping component comprising a control terminal, the second clamping component having the first stored charge when the control terminal is in the first state and the second stored charge when the control terminal is in the second state.
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公开(公告)号：US08981545B2
公开(公告)日：2015-03-17
申请号：US13932531
申请日：2013-07-01
Applicant: Infineon Technologies AG
Inventor： Olaf Hohlfeld , Guido Boenig , Uwe Jansen
CPC classification number: H01L23/24 , H01L23/291 , H01L23/58 , H01L24/42 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L25/18 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/4846 , H01L2224/48472 , H01L2224/49 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/85205 , H01L2224/8592 , H01L2224/92247 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
Abstract: A semiconductor module includes an electrically conductive lower contact piece and an electrically conductive upper contact piece spaced apart from one another in a vertical direction. The module further includes a semiconductor chip having a first load connection and a second load connection. The semiconductor chip is electrically conductively connected by the second load connection to the lower contact piece, and electrically conductively connected to the upper contact piece by at least one bonding wire bonded to the first load connection. An explosion protection means is arranged between the first load connection and the upper contact piece and into which each of the bonding wires is embedded over at least 80% or over at least 90% of its length.
Abstract translation: 半导体模块包括导电下接触片和在垂直方向上彼此间隔开的导电上接触片。 该模块还包括具有第一负载连接和第二负载连接的半导体芯片。 半导体芯片通过第二负载连接导电连接到下接触片，并且通过至少一个接合到第一负载连接的接合线而导电地连接到上接触片。 防爆装置设置在第一负载连接件和上接触片之间，每个接合线在其长度至少80％或以上至少80％的范围内被嵌入其中。
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公开(公告)号：US09923482B2
公开(公告)日：2018-03-20
申请号：US15214994
申请日：2016-07-20
Applicant: Infineon Technologies AG
Inventor： Johannes Georg Laven , Heiko Rettinger , Roman Baburske , Uwe Jansen , Thomas Basler
CPC classification number: H02M7/44 , H02M1/32 , H02M7/487 , H02M2001/0048 , H03K5/08
Abstract: A system and method for a power inverter with controllable clamps comprises a first voltage swing path, the first voltage swing path including a first plurality of power transistors, the first voltage swing path producing portions of a positive half-wave of an output signal when active; a second voltage swing path, the second voltage swing path including a second plurality of power transistors, the second voltage swing path producing portions of a negative half-wave of the output signal when active; a first clamping component coupled to the first voltage swing path, the first clamping component forming a freewheeling path for the first voltage swing path, the first clamping component comprising a control terminal, the first clamping component having a first stored charge when the control terminal is in a first state and a second stored charge when the control terminal is in a second state, the first stored charge being greater than the second stored charge; and a second clamping component coupled to the second voltage swing path, the second clamping component forming a freewheeling path for the second voltage swing path, the second clamping component comprising a control terminal, the second clamping component having the first stored charge when the control terminal is in the first state and the second stored charge when the control terminal is in the second state.
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公开(公告)号：US20140035117A1
公开(公告)日：2014-02-06
申请号：US13932531
申请日：2013-07-01
Applicant: Infineon Technologies AG
Inventor： Olaf Hohlfeld , Guido Boenig , Uwe Jansen
IPC: H01L23/24
CPC classification number: H01L23/24 , H01L23/291 , H01L23/58 , H01L24/42 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L24/85 , H01L25/18 , H01L2224/0603 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/4846 , H01L2224/48472 , H01L2224/49 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/85205 , H01L2224/8592 , H01L2224/92247 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
Abstract: A semiconductor module includes an electrically conductive lower contact piece and an electrically conductive upper contact piece spaced apart from one another in a vertical direction. The module further includes a semiconductor chip having a first load connection and a second load connection. The semiconductor chip is electrically conductively connected by the second load connection to the lower contact piece, and electrically conductively connected to the upper contact piece by at least one bonding wire bonded to the first load connection. An explosion protection means is arranged between the first load connection and the upper contact piece and into which each of the bonding wires is embedded over at least 80% or over at least 90% of its length.
Abstract translation: 半导体模块包括导电下接触片和在垂直方向上彼此间隔开的导电上接触片。 该模块还包括具有第一负载连接和第二负载连接的半导体芯片。 半导体芯片通过第二负载连接导电连接到下接触片，并且通过至少一个接合到第一负载连接的接合线而导电地连接到上接触片。 防爆装置设置在第一负载连接件和上接触片之间，每个接合线在其长度至少80％或以上至少80％的范围内被嵌入其中。
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