公开(公告)号：US11300885B2

公开(公告)日：2022-04-12

申请号：US16045253

申请日：2018-07-25

Applicant: Intel Corporation

Inventor： Robert Bristol ,  Guojing Zhang ,  Tristan Tronic ,  John Magana ,  Chang Ju Choi ,  Arvind Sundaramurthy ,  Richard Schenker

IPC: G03F7/20 ,  G03F1/24

Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.

公开(公告)号：US09046761B2

公开(公告)日：2015-06-02

申请号：US13846319

申请日：2013-03-18

Applicant: Intel Corporation

Inventor： Shem O. Ogadhoh ,  Charles H. Wallace ,  Ryan Pearman ,  Sven Henrichs ,  Arvind Sundaramurthy ,  Swaminathan Sivakumar

IPC: G03F1/36 ,  G03F1/00 ,  G03F1/26

CPC classification number: G03F1/00 ,  G03F1/26 ,  G03F1/36

Abstract: Techniques are disclosed for using sub-resolution phased assist features (SPAF) in a lithography mask to improve through process pattern fidelity and/or mitigate inverted aerial image problems. The technique also may be used to improve image contrast in non-inverted weak image sites. The use of SPAF in accordance with some such embodiments requires no adjustment to existing design rules, although adjustments can be made to enable compliance with mask inspection constraints. The use of SPAF also does not require changing existing fab or manufacturing processes, especially if such processes already comprehend phased shift mask capabilities. The SPAFs can be used to enhance aerial image contrast, without the SPAFs themselves printing. In addition, the SPAF phase etch depth can be optimized so as to make adjustments to a given predicted printed feature critical dimension.

Abstract translation: 公开了在光刻掩模中使用子分辨率相控辅助特征（SPAF）来改进过程模式保真度和/或减轻倒置的空中图像问题的技术。 该技术也可用于改善非反转弱图像位置中的图像对比度。 根据一些这样的实施例的SPAF的使用不需要调整现有的设计规则，尽管可以进行调整以使得能够符合掩模检查约束。 使用SPAF也不需要更改现有的晶圆厂或制造工艺，特别是如果这些工艺已经了解了相位移位掩模功能。 SPAF可以用于增强空中图像对比度，而不需要SPAF自身的打印。 此外，可以优化SPAF相蚀刻深度，以便对给定的预测印刷特征临界尺寸进行调整。