公开(公告)号：US20180166145A1

公开(公告)日：2018-06-14

申请号：US15373048

申请日：2016-12-08

Applicant: Intel Corporation

Inventor： Minki CHO ,  Jaydeep KULKARNI ,  Carlos TOKUNAGA ,  Muhammad KHELLAH ,  James TSCHANZ

IPC: G11C29/12 ,  G11C5/14 ,  G11C11/417

CPC classification number: G11C11/417 ,  G11C5/14 ,  G11C11/4125 ,  G11C11/413 ,  G11C29/12005 ,  G11C29/24 ,  G11C29/50 ,  G11C29/50012 ,  G11C29/50016 ,  G11C29/52 ,  G11C2029/0401 ,  G11C2029/1206 ,  G11C2029/5004

Abstract: An apparatus is described. The apparatus includes a semiconductor chip. The semiconductor chip includes a memory having multiple storage cells. The storage cells are to receive a supply voltage. The semiconductor chip includes supply voltage retention circuitry. The supply voltage retention circuitry is to determine a level of the supply voltage at which the storage cells are able to retain their respective data. The supply voltage retention circuitry is to receive the supply voltage during a stress mode of the supply voltage retention circuitry. The supply voltage retention circuitry is to more weakly retain its stored information than the storage cells during a measurement mode at which the level is determined.

公开(公告)号：US20150192977A1

公开(公告)日：2015-07-09

申请号：US14666165

申请日：2015-03-23

Applicant: Intel Corporation

Inventor： Ming ZHANG ,  Chris WILKERSON ,  Greg TAYLOR ,  Randy J. AKSAMIT ,  James TSCHANZ

IPC: G06F1/32

CPC classification number: G06F1/324 ,  G06F1/26 ,  G06F1/32 ,  G06F1/3203 ,  G06F1/3225 ,  G06F1/3275 ,  G06F1/3293 ,  G06F12/0802 ,  G06F2212/1028 ,  Y02D10/13

Abstract: Disclosed herein are approaches to reducing a guardband (margin) used for minimum voltage supply (Vcc) requirements for memory such as cache.

Abstract translation: 这里公开了减少用于诸如高速缓存的存储器的最小电压供应（Vcc）要求的保护带（余量）的方法。