INTEGRATED STRUCTURE WITH BIDIRECTIONAL VERTICAL ACTUATION
    1.
    发明申请
    INTEGRATED STRUCTURE WITH BIDIRECTIONAL VERTICAL ACTUATION 有权
    具有双向垂直执行的集成结构

    公开(公告)号:US20140264645A1

    公开(公告)日:2014-09-18

    申请号:US13831470

    申请日:2013-03-14

    CPC classification number: H01L27/1203 B81B3/0056 B81B2201/0221 B81B2203/053

    Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.

    Abstract translation: 微电子机械系统(MEMS)装置包括具有第一表面和第二表面的第一基底,第一基底包括基底层,设置在基底层上的可移动光束,至少一个金属层,以及一个或 更多的间隔设置在基底层上,使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底,第二衬底包括一个或多个结合到一个或多个支座的金属层,导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。

    MEMS device and process for RF and low resistance applications

    公开(公告)号:US09617141B2

    公开(公告)日:2017-04-11

    申请号:US14800604

    申请日:2015-07-15

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    MEMS device and process for RF and low resistance applications
    3.
    发明授权
    MEMS device and process for RF and low resistance applications 有权
    用于RF和低电阻应用的MEMS器件和工艺

    公开(公告)号:US09114977B2

    公开(公告)日:2015-08-25

    申请号:US13687304

    申请日:2012-11-28

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面,MEMS器件包括MEMS晶片,其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层,第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极,使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

    MEMS device and process for RF and low resistance applications

    公开(公告)号:US10160635B2

    公开(公告)日:2018-12-25

    申请号:US15477202

    申请日:2017-04-03

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    MEMS device and process for RF and low resistance applications

    公开(公告)号:US10508022B2

    公开(公告)日:2019-12-17

    申请号:US15477193

    申请日:2017-04-03

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Integrated structure with bidirectional vertical actuation
    6.
    发明授权
    Integrated structure with bidirectional vertical actuation 有权
    具有双向垂直驱动的集成结构

    公开(公告)号:US09035428B2

    公开(公告)日:2015-05-19

    申请号:US13831470

    申请日:2013-03-14

    CPC classification number: H01L27/1203 B81B3/0056 B81B2201/0221 B81B2203/053

    Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.

    Abstract translation: 微电子机械系统(MEMS)装置包括具有第一表面和第二表面的第一基底,第一基底包括基底层,设置在基底层上的可移动光束,至少一个金属层,以及一个或 更多的间隔设置在基底层上,使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底,第二衬底包括一个或多个结合到一个或多个支座的金属层,导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。

Patent Agency Ranking