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公开(公告)号：US09802815B2
公开(公告)日：2017-10-31
申请号：US14957562
申请日：2015-12-02
申请人： Invensense, Inc.
CPC分类号： B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
摘要： A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
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公开(公告)号：US08945969B2
公开(公告)日：2015-02-03
申请号：US14456973
申请日：2014-08-11
申请人： InvenSense, Inc.
CPC分类号： B81C1/00301 , B81B7/0064 , B81B2207/098 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , B81C2203/031
摘要： A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.
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公开(公告)号：US09428379B2
公开(公告)日：2016-08-30
申请号：US14174639
申请日：2014-02-06
申请人： InvenSense, Inc.
CPC分类号： B81B7/0061 , B81B3/001 , B81B2201/0257 , B81B2203/053 , B81B2203/058 , B81B2207/012 , H04R19/005
摘要： A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.
摘要翻译： 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板，其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板，第二板，连杆和锚固件都包含在由第一基板和第二基板形成的外壳中，其中第一和第二基板中的一个包含通孔，以将第一板的第一表面暴露于 环境。
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4.发明申请METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT 有权具有双层结构层和声学端口的MEMS结构的方法公开(公告)号：US20160083247A1
公开(公告)日：2016-03-24
申请号：US14957562
申请日：2015-12-02
申请人： Invensense, Inc.
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
摘要： A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
摘要翻译： 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。
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公开(公告)号：US20140264645A1
公开(公告)日：2014-09-18
申请号：US13831470
申请日：2013-03-14
申请人： INVENSENSE, INC.
发明人： Michael Julian Daneman , Martin Lim , Li-Wen Hung , Stephen Lloyd
IPC分类号： H01L27/12
CPC分类号： H01L27/1203 , B81B3/0056 , B81B2201/0221 , B81B2203/053
摘要： A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.
摘要翻译： 微电子机械系统（MEMS）装置包括具有第一表面和第二表面的第一基底，第一基底包括基底层，设置在基底层上的可移动光束，至少一个金属层，以及一个或 更多的间隔设置在基底层上，使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底，第二衬底包括一个或多个结合到一个或多个支座的金属层，导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。
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公开(公告)号：US08822252B2
公开(公告)日：2014-09-02
申请号：US14033366
申请日：2013-09-20
申请人： InvenSense, Inc.
IPC分类号： H01L21/00
CPC分类号： B81C1/00301 , B81B7/0064 , B81B2207/098 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , B81C2203/031
摘要： A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.
摘要翻译： 公开了一种在集成MEMS器件中制造电连接的方法。 该方法包括形成MEMS晶片。 形成MEMS晶片包括在第一半导体层中形成一个空腔，将第一半导体层与设置在第一半导体层和第二半导体层之间的电介质层结合到第二半导体层，并且通过第二半导体蚀刻至少一个通孔 层和介电层，并在第二半导体层上沉积导电材料并填充至少一个通孔。 形成MEMS晶片还包括图案化和蚀刻导电材料以形成一个间隔并在导电材料上沉积锗层，图案化和蚀刻锗层，以及图案化和蚀刻第二半导体层以限定一个MEMS结构。 该方法还包括将MEMS晶片接合到基底基板。
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7.发明申请METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT 有权具有双层结构层和声学端口的MEMS结构的方法公开(公告)号：US20140239353A1
公开(公告)日：2014-08-28
申请号：US14084569
申请日：2013-11-19
申请人： Invensense, Inc.
CPC分类号： B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
摘要： A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
摘要翻译： 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。
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公开(公告)号：US09828240B2
公开(公告)日：2017-11-28
申请号：US15047579
申请日：2016-02-18
申请人： Invensense, Inc.
发明人： Fang Liu , Michael Julian Daneman , Brian Kim , Anthony Minervini
IPC分类号： B81B3/00 , B81C1/00 , H01L29/00 , H01L21/00 , H04R19/04 , H01L29/84 , H01L27/092 , H01L23/00 , H04R19/00
CPC分类号： B81C1/00238 , B81B3/0018 , B81B2201/0257 , B81C1/00309 , B81C2203/0792 , H01L24/05 , H01L27/092 , H01L2924/01322 , H01L2924/12042 , H04R19/005 , H01L2924/00
摘要： A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
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9.发明授权Integrated CMOS back cavity acoustic transducer and the method of producing the same 有权集成CMOS后腔声换能器及其制作方法公开(公告)号：US09299671B2
公开(公告)日：2016-03-29
申请号：US14054495
申请日：2013-10-15
申请人： Invensense, Inc.
发明人： Fang Liu , Michael Julian Daneman , Brian Kim , Anthony Minervini
IPC分类号： B81B3/00 , B81C1/00 , H01L29/00 , H01L21/00 , H04R19/04 , H01L29/84 , H01L23/00 , H01L27/092 , H04R19/00
CPC分类号： B81C1/00238 , B81B3/0018 , B81B2201/0257 , B81C1/00309 , B81C2203/0792 , H01L24/05 , H01L27/092 , H01L2924/01322 , H01L2924/12042 , H04R19/005 , H01L2924/00
摘要： A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
摘要翻译： MEMS器件包括具有可移动元件的MEMS衬底。 还包括具有空腔的CMOS衬底，MEMS衬底设置在CMOS衬底的顶部上。 此外，后腔连接到CMOS衬底，后腔至少部分地由CMOS衬底中的空腔形成，并且可移动元件声耦合到后腔。
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10.发明授权Method for MEMS structure with dual-level structural layer and acoustic port 有权具有双层结构层和声学端口的MEMS结构方法公开(公告)号：US09227842B2
公开(公告)日：2016-01-05
申请号：US14084569
申请日：2013-11-19
申请人： Invensense, Inc.
CPC分类号： B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
摘要： A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
摘要翻译： 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。
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