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    GAS SENSING METHOD WITH CHEMICAL AND THERMAL CONDUCTIVITY SENSING
    1.
    发明申请
    GAS SENSING METHOD WITH CHEMICAL AND THERMAL CONDUCTIVITY SENSING 审中-公开

    公开(公告)号：US20200173946A1

    公开(公告)日：2020-06-04

    申请号：US16786361

    申请日：2020-02-10

    Applicant: INVENSENSE, INC.

    Inventor： Fang Liu ,  Peter Hartwell ,  Martin Lim ,  Yushi Yang

    IPC: G01N27/04 ,  G01N27/12 ,  G01N27/18 ,  G01N33/00

    Abstract: The present invention relates to methods for detecting gases in an environment using chemical and thermal sensing. In one embodiment, a method includes exposing a chemiresistor embedded within a sensor pixel to a gas in an environment; setting a heater embedded within the sensor pixel to a sensing temperature, the sensing temperature being greater than room temperature; measuring an electrical resistance of the chemiresistor in response to setting the heater to the sensing temperature; and in response to a difference between the electrical resistance of the chemiresistor and a reference electrical resistance being less than a threshold, supplying a fixed power input to the heater embedded within the sensor pixel and measuring a temperature of the sensor pixel relative to a reference temperature.

    MEMS device and process for RF and low resistance applications
    2.
    发明授权
    MEMS device and process for RF and low resistance applications 有权

    公开(公告)号：US10508022B2

    公开(公告)日：2019-12-17

    申请号：US15477193

    申请日：2017-04-03

    Applicant: INVENSENSE, INC.

    Inventor： Michael J. Daneman ,  Martin Lim ,  Xiang Li ,  Li-Wen Hung

    IPC: B81B3/00 ,  B81C3/00

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL
    8.
    发明申请
    METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL 有权
    使用外加材料增加MEMS外壳压力的方法

    公开(公告)号：US20150360939A1

    公开(公告)日：2015-12-17

    申请号：US14832786

    申请日：2015-08-21

    Applicant: InvenSense, Inc.

    Inventor： Cerina Zhang ,  Martin Lim ,  Jongwoo Shin ,  Joseph Seeger

    IPC: B81C1/00

    CPC classification number: B81C1/00301 ,  B81B7/007 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/0023 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00269 ,  B81C2201/0104 ,  B81C2201/0132 ,  B81C2203/0145 ,  B81C2203/019 ,  B81C2203/035 ,  B81C2203/0792

    Abstract: Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.

    Abstract translation: 半导体制造工艺包括提供第一衬底，其具有设置在图案化顶层金属层上方的第一钝化层，并且还具有设置在第一钝化层上的第二钝化层; 第二钝化层具有顶表面。 所述方法还包括在第二钝化层的第一部分中形成开口，并且开口暴露第一钝化层的表面的一部分。 所述方法还包括图案化第二钝化层和第一钝化层以暴露图案化顶层金属层的部分并将第二基板和第一基板彼此接合。 接合发生在至少第一钝化层的暴露部分经历脱气的温度范围内。

    Integrated structure with bidirectional vertical actuation
    10.
    发明授权
    Integrated structure with bidirectional vertical actuation 有权
    具有双向垂直驱动的集成结构

    公开(公告)号：US09035428B2

    公开(公告)日：2015-05-19

    申请号：US13831470

    申请日：2013-03-14

    Applicant: Invensense, Inc.

    Inventor： Michael Julian Daneman ,  Martin Lim ,  Li-Wen Hung ,  Stephen Lloyd

    IPC: H01L29/93 ,  H01L27/12 ,  B81B3/00

    CPC classification number: H01L27/1203 ,  B81B3/0056 ,  B81B2201/0221 ,  B81B2203/053

    Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.

    Abstract translation: 微电子机械系统（MEMS）装置包括具有第一表面和第二表面的第一基底，第一基底包括基底层，设置在基底层上的可移动光束，至少一个金属层，以及一个或 更多的间隔设置在基底层上，使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底，第二衬底包括一个或多个结合到一个或多个支座的金属层，导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。

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