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    Microlens structure for improved CMOS image sensor sensitivity
    3.
    发明授权
    Microlens structure for improved CMOS image sensor sensitivity 有权
    微透镜结构提高了CMOS图像传感器的灵敏度

    公开(公告)号：US07505206B2

    公开(公告)日：2009-03-17

    申请号：US11456249

    申请日：2006-07-10

    申请人： Jack Deng ,  Chih-Kung Chang ,  Chin Chen Kuo ,  Ming-Chang Kao ,  Fu-Tien Weng ,  Bii-Junq Chang

    发明人： Jack Deng ,  Chih-Kung Chang ,  Chin Chen Kuo ,  Ming-Chang Kao ,  Fu-Tien Weng ,  Bii-Junq Chang

    IPC分类号： G02B27/10

    CPC分类号： G02B3/0056 ,  G02B3/0018

    摘要： A method of manufacturing a microlens device by depositing a microlens material layer over a substrate that includes photo-sensors. The microlens material layer is then exposed and developed to define microlens material elements, including first microlens material elements and second microlens material elements. Each second microlens material element is substantially greater in thickness relative to each first microlens material element. The microlens material elements are then heated to form a microlens array that includes first microlens array elements, each corresponding to a first microlens material element, and second microlens array elements, each corresponding to a second microlens material element. Each first microlens array element has a substantially greater focal length relative to each second microlens array element. For example, each second microlens array element is substantially greater in thickness relative to each first microlens array element.

    摘要翻译： 一种通过在包括光电传感器的衬底上沉积微透镜材料层来制造微透镜器件的方法。 然后将微透镜材料层曝光和显影以限定微透镜材料元件，包括第一微透镜材料元件和第二微透镜材料元件。 每个第二微透镜材料元件相对于每个第一微透镜材料元件的厚度基本上更大。 然后将微透镜材料元件加热以形成微透镜阵列，其包括每个对应于第一微透镜材料元件的第一微透镜阵列元件和分别对应于第二微透镜材料元件的第二微透镜阵列元件。 每个第一微透镜阵列元件相对于每个第二微透镜阵列元件具有大得多的焦距。 例如，每个第二微透镜阵列元件相对于每个第一微透镜阵列元件的厚度基本上更大。

    Advanced cavity structure for wafer level chip scale package
    8.
    发明申请
    Advanced cavity structure for wafer level chip scale package 审中-公开
    先进的腔体结构，用于晶圆级芯片级封装

    公开(公告)号：US20060131710A1

    公开(公告)日：2006-06-22

    申请号：US11020041

    申请日：2004-12-21

    申请人： Chin Kuo ,  Jack Deng ,  Fu-Tien Weng ,  Chih-Kung Chang ,  Bii-Jung Chang

    发明人： Chin Kuo ,  Jack Deng ,  Fu-Tien Weng ,  Chih-Kung Chang ,  Bii-Jung Chang

    IPC分类号： H01L21/00 ,  H01L23/02

    CPC分类号： H01L27/14685 ,  H01L27/14618 ,  H01L27/14621 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides an advanced cavity structure for optically sensitive devices in wafer level chip scale package and methods of manufacturing thereof. Image sensor or light detection integrated circuits are formed on substrate. Substantially absorptive bleached cavity walls are formed about the image sensor or light detection integrated circuits. Upon attaching a transparent layer to the bleached cavity walls and above the image sensor or light detection integrated circuits, open chambers are formed thereby permitting the image sensor or light detection integrated circuits to receive and manipulate signals without decreasing or decaying the optical sensitivity of the incident light. Furthermore, individual image sensor or light detection integrated circuits may be separated from each other to comprise wafer level chip scale packages of at least one image sensor or light detection integrated circuits, at least one transparent layer, and at least one open chamber.

    摘要翻译： 本发明提供了一种用于晶片级芯片级封装中的光敏器件的高级腔结构及其制造方法。 图像传感器或光检测集成电路形成在基板上。 围绕图像传感器或光检测集成电路形成基本吸收漂白的空腔壁。 当将透明层附着到漂白的空腔壁和图像传感器或光检测集成电路上方时，形成开放室，从而允许图像传感器或光检测集成电路接收和操纵信号而不会降低或衰减事件的光学灵敏度 光。 此外，各个图像传感器或光检测集成电路可以彼此分离，以包括至少一个图像传感器或光检测集成电路，至少一个透明层和至少一个开放室的晶片级芯片级封装。