公开(公告)号：US07507598B2

公开(公告)日：2009-03-24

申请号：US11156794

申请日：2005-06-20

申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

IPC分类号： H01L21/00

CPC分类号： H01L27/14625 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

摘要翻译： 提供了一种处理衬底的方法。 衬底具有至少一个滤波器区域，多个接合焊盘以及围绕滤波器区域和接合焊盘布置的多个划线。 在衬底上形成第一平坦化层。 平坦化层具有覆盖过滤器区域，接合焊盘和划线的基本平坦的顶表面。 在第一平坦化层和滤波器区域内形成至少一个抗蚀剂层，同时第一平坦化层覆盖接合焊盘和划线。

公开(公告)号：US08129762B2

公开(公告)日：2012-03-06

申请号：US12347427

申请日：2008-12-31

申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

IPC分类号： H01L27/148

CPC分类号： H01L27/14625 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

摘要翻译： 提供了一种处理衬底的方法。 衬底具有至少一个滤波器区域，多个接合焊盘以及围绕滤波器区域和接合焊盘布置的多个划线。 在衬底上形成第一平坦化层。 平坦化层具有覆盖过滤器区域，接合焊盘和划线的基本平坦的顶表面。 在第一平坦化层和滤波器区域内形成至少一个抗蚀剂层，同时第一平坦化层覆盖接合焊盘和划线。

公开(公告)号：US20090104547A1

公开(公告)日：2009-04-23

申请号：US12347427

申请日：2008-12-31

申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

IPC分类号： G03F3/00

CPC分类号： H01L27/14625 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

摘要翻译： 提供了一种处理衬底的方法。 衬底具有至少一个滤波器区域，多个接合焊盘以及围绕滤波器区域和接合焊盘布置的多个划线。 在衬底上形成第一平坦化层。 平坦化层具有覆盖过滤器区域，接合焊盘和划线的基本平坦的顶表面。 在第一平坦化层和滤波器区域内形成至少一个抗蚀剂层，同时第一平坦化层覆盖接合焊盘和划线。

公开(公告)号：US20060019424A1

公开(公告)日：2006-01-26

申请号：US11156794

申请日：2005-06-20

申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin Chen Kuo ,  Te-Fu Tseng ,  Chih-Kung Chang ,  Jack Deng ,  Chung-Sheng Hsiung ,  Bii-Junq Chang

IPC分类号： H01L21/00

CPC分类号： H01L27/14625 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

公开(公告)号：US06849533B2

公开(公告)日：2005-02-01

申请号：US10354697

申请日：2003-01-29

申请人： Chih-Kung Chang ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Fu-Tien Wong ,  Chin-Chen Kuo ,  Chung-Sheng Hsiung ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Po-Wen Lin ,  Te-Fu Tseng

发明人： Chih-Kung Chang ,  Yu-Kung Hsiao ,  Sheng-Liang Pan ,  Fu-Tien Wong ,  Chin-Chen Kuo ,  Chung-Sheng Hsiung ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Po-Wen Lin ,  Te-Fu Tseng

IPC分类号： H01L21/44 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/00

摘要： A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.

摘要翻译： 用于制造微电子产品的方法提供了在接合焊盘和地形特征上形成平坦化层，两者均形成在衬底上横向分离。 平坦化层在接合焊盘上形成为具有减小的厚度，使得其可以容易地蚀刻以暴露接合焊盘，同时使用形成在地形特征上但不在接合焊盘上的附加层作为掩模。 该方法对于形成具有减弱的键合垫腐蚀的滤色器传感器图像阵列光电产品特别有用。

公开(公告)号：US06956253B2

公开(公告)日：2005-10-18

申请号：US10456759

申请日：2003-06-06

申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo ,  Te-Fu Tseng

发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo ,  Te-Fu Tseng

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L27/146 ,  H01L29/768

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14685

摘要： A color filter includes a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines. The scribe lines are at least partially filled with a resist material. At least one color resist layer is formed above the substrate within the at least one filter region.

摘要翻译： 滤色器包括具有布置成形成由划线包围的至少一个滤光片区域的多个划线的基板。 划痕线至少部分地被抗蚀剂材料填充。 在至少一个过滤器区域内的衬底上方形成至少一个着色抗蚀剂层。

公开(公告)号：US06861207B2

公开(公告)日：2005-03-01

申请号：US10611645

申请日：2003-06-30

申请人： Hung-Jen Hsu ,  Chih-Kung Chang ,  Fu-Tien Weng ,  Te-Fu Tseng ,  Chin-Chen Kuo ,  Chiung-Yuan Chang

发明人： Hung-Jen Hsu ,  Chih-Kung Chang ,  Fu-Tien Weng ,  Te-Fu Tseng ,  Chin-Chen Kuo ,  Chiung-Yuan Chang

IPC分类号： G02B3/00 ,  H01L27/14

CPC分类号： G02B5/201 ,  G02B3/0018 ,  G02B3/0056 ,  H01L27/14685

摘要： A method of fabricating microlens devices. The method includes filling the bond pad areas and scribe lines, or other areas, to improve the topography of the semiconductor wafer surface. A microlens material is applied to the surface after the bond pad areas and scribe lines have been filled. Because of the improved topography, the thickness of the microlens material is more uniform, thereby facilitating the formation of uniformly shaped microlenses.

摘要翻译： 一种制造微透镜器件的方法。 该方法包括填充接合焊盘区域和划线或其它区域，以改善半导体晶片表面的形貌。 在填充接合焊盘区域和划线之后，将微透镜材料施加到表面。 由于形貌改善，微透镜材料的厚度更均匀，从而有助于形成均匀成形的微透镜。

公开(公告)号：US06964916B2

公开(公告)日：2005-11-15

申请号：US10781217

申请日：2004-02-17

申请人： Chin Chen Kuo ,  Chih-Kung Chang ,  Hung-Jen Hsu ,  Fu-Tien Weng ,  Te-Fu Tseng

发明人： Chin Chen Kuo ,  Chih-Kung Chang ,  Hung-Jen Hsu ,  Fu-Tien Weng ,  Te-Fu Tseng

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L27/146 ,  H01L29/768

CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14685

摘要： A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.

摘要翻译： 一种用于处理半导体衬底的方法包括提供具有至少一个过滤器区域的衬底，其中具有多个焊盘。 金属沉积在接合焊盘上方，以减少焊盘台阶高度。 形成平坦化层，使得沉积的金属具有接近平坦化层的高度的高度。 在平坦化层上方形成至少一层耐光层。

公开(公告)号：US20050001281A1

公开(公告)日：2005-01-06

申请号：US10858443

申请日：2004-06-01

申请人： Hung-Jen Hsu ,  Chiu-Kung Chang ,  Fu-Tien Wong ,  Te-Fu Tseng

发明人： Hung-Jen Hsu ,  Chiu-Kung Chang ,  Fu-Tien Wong ,  Te-Fu Tseng

IPC分类号： G02B3/00 ,  G02B27/09 ,  H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  G02B9/00

CPC分类号： G02B3/0012 ,  G02B3/0056 ,  G02B27/09

摘要： A packaged image sensing device of improved sensitivity is formed by providing a mechanism for enhancing the focusing of embedded microlenses on the photosensitive elements of the image sensor. Normally, the bonding material interposed between the packaging layers and the microlenses defocuses the microlenses. In one embodiment of the present invention, the focus is restored by interposing an intermediate optically refractive layer between the bonding material and the lenses. In another embodiment, a bonding material with a lower index of refraction is used. In a final embodiment, the microlenses are formed in a material of a higher index of refraction.

摘要翻译： 通过提供用于增强嵌入式微透镜在图像传感器的感光元件上的聚焦的机构来形成具有改进的灵敏度的封装图像感测装置。 通常，插入在包装层和微透镜之间的接合材料使微透镜散焦。 在本发明的一个实施例中，通过在接合材料和透镜之间插入中间光学折射层来恢复焦点。 在另一个实施例中，使用具有较低折射率的接合材料。 在最终实施例中，微透镜形成为具有较高折射率的材料。

公开(公告)号：US06563154B1

公开(公告)日：2003-05-13

申请号：US09208915

申请日：1998-12-10

申请人： Chun-Chieh Chang ,  Yu-Jen Yu ,  Te-Fu Tseng ,  Chao-Yi Lan

发明人： Chun-Chieh Chang ,  Yu-Jen Yu ,  Te-Fu Tseng ,  Chao-Yi Lan

IPC分类号： H01L27108

CPC分类号： H01L28/84 ,  H01L21/28035 ,  H01L21/28158 ,  H01L21/28273 ,  H01L21/823437 ,  H01L27/0629

摘要： An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630° C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560° C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.

摘要翻译： 描述了一种用于沉积稍后形成栅极基座的多晶硅层的改进方法。 沉积分两个阶段进行。 首先，使用约630℃的常规沉积温度。 然后，当多晶硅的预期厚度已经生长时，温度降低到约560℃，而不中断沉积过程，并且膜的生长继续完成。 之后是使用POCl 3的标准掺杂步骤。 已经发现以这种方式形成的多晶硅膜具有非常光滑的表面，因为最顶层较少受到不受控制的晶粒生长。 因此，通过氧化这些膜获得的介电层表现出优异的击穿电压。