摘要:
A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with a dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.
摘要:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
摘要:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
摘要:
A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.
摘要:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
摘要:
A laser oscillator at 535 nm produced by a chemical process yielding stimulated emission of visible radiation via fast near resonant intermolecular energy transfer comprising the steps of reacting a reaction with a first metal vapor to form metastable states of metal oxides or metal halides, transferring the energy from the metastable states to receptor metal atoms by means of near resonant energy transfer to form electronically excited receptor metal atoms in an inverted configuration, and, through multiple reflection, allowing for the repeated passage of light through the inverted gain medium so as to produce oscillation.
摘要:
Oxynitride nanoparticles, methods of preparation thereof, and methods of use thereof are disclosed. One representative oxynitride nanoparticle includes a MxOyNz nanoparticle, where x is in the range of about 1 to 3, y is in the range of about 0.5 to less than 5, and z is in the range of about 0.001 to 0.5.
摘要翻译:公开了氮氧化物纳米颗粒,其制备方法及其使用方法。 一个代表性的氮氧化物纳米颗粒包括一个M x N y N z N N y O y,其中x在约1至3的范围内,y在 约0.5至小于5的范围,z在约0.001至0.5的范围内。
摘要:
A chemical process yielding stimulated emission of visible radiation via fast rear resonant intermolecular energy transfer comprising the steps of reacting a first metal or semimetal vapor with a reactant to produce a metastable excited state reaction product and transferring energy stored in the metastable excited state of the reaction product to a second metal or semimetal vapor by means of near resonant energy transfer to form electronically excited receptor atoms in a population inversion relative to a lower level of excitation of the receptor atoms. In the preferred form of the process, the first metal or semimetal vapor is a group IIIA or IVA element. The second metal or semimetal vapor is of a group IIA or IVA element and the reactant is either ozone, nitrogen oxide, nitrogen dioxide or a halide.
摘要:
Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, and the like. One exemplary embodiment of a device, among others, includes: a conductometric gas sensor including a n-type substrate having a porous layer, wherein a plurality of ‘nanostructures are disposed on a portion of the porous layer, wherein the nanostructure provides a fractional coverage on the porous layer, wherein the conductometric gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration.
摘要:
Embodiments of the present disclosure provide for methods of selecting a nanostructured deposit for a conductometric gas sensor, methods of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric gas sensor, devices including conductometric gas sensors, arrays of conductometric gas sensors, methods of determining the acidic or basic characteristic of a gas, methods of treating a sensor, and the like.