公开(公告)号：US11855117B2

公开(公告)日：2023-12-26

申请号：US17167081

申请日：2021-02-04

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Akihiro Hanada ,  Marina Mochizuki ,  Ryo Onodera ,  Fumiya Kimura ,  Isao Suzumura

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/14689

Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.

公开(公告)号：US11189745B2

公开(公告)日：2021-11-30

申请号：US17024725

申请日：2020-09-18

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takanori Tsunashima ,  Marina Mochizuki

IPC: H01L27/14 ,  H01L31/12 ,  G06F1/16 ,  H01L31/101

Abstract: The problem of the present disclosure is to provide a photo sensor circuit that uses oxide semiconductor transistors and the operation of which is stable. The photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. Each of the photo transistor, the first switching transistor, and the second transistor includes an oxide semiconductor layer as a channel layer.

公开(公告)号：US12213329B2

公开(公告)日：2025-01-28

申请号：US17720366

申请日：2022-04-14

Applicant: Japan Display Inc.

Inventor： Marina Mochizuki ,  Isao Suzumura

IPC: H10K30/82 ,  H10K30/65

Abstract: The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.

公开(公告)号：US12178059B2

公开(公告)日：2024-12-24

申请号：US17500329

申请日：2021-10-13

Applicant: Japan Display Inc. ,  The University of Tokyo

Inventor： Takashi Nakamura ,  Makoto Uchida ,  Masahiro Tada ,  Marina Mochizuki ,  Hirofumi Kato ,  Akio Takimoto ,  Takao Someya ,  Tomoyuki Yokota

IPC: H01L29/78 ,  H01L29/786 ,  H10K39/32 ,  A61B5/021 ,  G06V40/13

Abstract: A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.

公开(公告)号：US11973161B2

公开(公告)日：2024-04-30

申请号：US18091388

申请日：2022-12-30

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takanori Tsunashima ,  Marina Mochizuki

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

CPC classification number: H01L31/125 ,  G06F1/1605 ,  H01L31/1016

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US11575062B2

公开(公告)日：2023-02-07

申请号：US17527192

申请日：2021-11-16

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takanori Tsunashima ,  Marina Mochizuki

IPC: H01L27/14 ,  H01L31/12 ,  G06F1/16 ,  H01L31/101

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US20220293663A1

公开(公告)日：2022-09-15

申请号：US17830403

申请日：2022-06-02

Applicant: Japan Display Inc.

Inventor： Marina Mochizuki ,  Isao Suzumura

IPC: H01L27/146

Abstract: A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.