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    Semiconductor device and method of manufacturing semiconductor device
    1.
    发明授权
    Semiconductor device and method of manufacturing semiconductor device 有权

    公开(公告)号：US11855117B2

    公开(公告)日：2023-12-26

    申请号：US17167081

    申请日：2021-02-04

    Applicant: Japan Display Inc.

    Inventor： Hajime Watakabe ,  Akihiro Hanada ,  Marina Mochizuki ,  Ryo Onodera ,  Fumiya Kimura ,  Isao Suzumura

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/14689

    Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.

    Display device
    2.
    发明授权
    Display device 有权

    公开(公告)号：US11822194B2

    公开(公告)日：2023-11-21

    申请号：US17749217

    申请日：2022-05-20

    Applicant: Japan Display Inc.

    Inventor： Fumiya Kimura ,  Isao Suzumura ,  Junko Nagasawa ,  Atsuko Imoto

    IPC: G02F1/1362 ,  G02F1/1368

    CPC classification number: G02F1/136222 ,  G02F1/1368 ,  G02F1/136209 ,  G02F1/136286

    Abstract: According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a color filter, and transparent conductive layers including a pixel electrode, a first conductive layer, and a second conductive layer. The first conductive layer is located between the second insulating layer and the third insulating layer, and is in contact with a second area of the semiconductor layer. The second conductive layer is located on the color filter and is in contact with the first conductive layer. The pixel electrode is located on the second conductive layer and is in contact with the second conductive layer.

    Display device
    6.
    发明授权
    Display device 有权

    公开(公告)号：US11874574B2

    公开(公告)日：2024-01-16

    申请号：US18085595

    申请日：2022-12-21

    Applicant: Japan Display Inc.

    Inventor： Fumiya Kimura ,  Isao Suzumura

    IPC: G02F1/1362 ,  G02F1/1343 ,  G02F1/1333

    CPC classification number: G02F1/136222 ,  G02F1/133345 ,  G02F1/134345 ,  G02F1/136227 ,  G02F1/136286

    Abstract: According to one embodiment, a display device includes a signal line, a scanning line, a semiconductor layer, a first insulating layer which covers the semiconductor layer, a color filter above the first insulating layer, a pixel electrode above the color filter and a common electrode. The first insulating layer includes a first contact hole for connecting the semiconductor layer and the pixel electrode to each other. The first contact hole is provided at a position displaced from the color filter in plan view.

    Display device
    7.
    发明授权
    Display device 有权

    公开(公告)号：US12298636B2

    公开(公告)日：2025-05-13

    申请号：US18637685

    申请日：2024-04-17

    Applicant: Japan Display Inc.

    Inventor： Fumiya Kimura ,  Isao Suzumura

    IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1335 ,  G03F7/00

    Abstract: A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.

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