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公开(公告)号:US20130171834A1
公开(公告)日:2013-07-04
申请号:US13671424
申请日:2012-11-07
申请人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Spiram , George Andrew Antonelli , Bart van Schravendijk
发明人: Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Spiram , George Andrew Antonelli , Bart van Schravendijk
IPC分类号: H01L21/02
CPC分类号: H01L21/0234 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274
摘要: Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.
摘要翻译: 本文公开了形成膜堆叠的方法,其可以包括由含氮前体与含硅前体的反应形成的氮化硅膜的等离子体加速沉积,等离子体加速从处理室中显着消除含硅前体,等离子体 在由含硅前体与氧化剂的反应形成的氮化硅膜的顶部加速沉积氧化硅膜,并且等离子体加速了处理室中的氧化剂的显着消除。 本文还公开了用于形成氮化硅和氧化硅膜的膜堆叠的处理站装置,其可以包括处理室,一个或多个气体输送管线,一个或多个RF发生器,以及具有指令的机器可读介质的系统控制器 用于操作一个或多个气体输送管线和一个或多个RF发生器。