公开(公告)号：US20130171834A1

公开(公告)日：2013-07-04

申请号：US13671424

申请日：2012-11-07

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Spiram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Spiram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H01L21/02

CPC分类号： H01L21/0234 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274

摘要： Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

摘要翻译： 本文公开了形成膜堆叠的方法，其可以包括由含氮前体与含硅前体的反应形成的氮化硅膜的等离子体加速沉积，等离子体加速从处理室中显着消除含硅前体，等离子体 在由含硅前体与氧化剂的反应形成的氮化硅膜的顶部加速沉积氧化硅膜，并且等离子体加速了处理室中的氧化剂的显着消除。 本文还公开了用于形成氮化硅和氧化硅膜的膜堆叠的处理站装置，其可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器，以及具有指令的机器可读介质的系统控制器 用于操作一个或多个气体输送管线和一个或多个RF发生器。

公开(公告)号：US08741394B2

公开(公告)日：2014-06-03

申请号：US12970846

申请日：2010-12-16

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： H05H1/24

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

摘要翻译： 描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。 在一个实例中，提供了一种用于在基底上沉积薄膜叠层的方法，其中薄膜叠层包括不同组成的薄膜，并且沉淀是在原位进行的。 该方法包括在第一等离子体活化膜沉积阶段中，在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US20110236594A1

公开(公告)日：2011-09-29

申请号：US12970846

申请日：2010-12-16

申请人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

发明人： Jason Haverkamp ,  Pramod Subramonium ,  Joe Womack ,  Dong Niu ,  Keith Fox ,  John Alexy ,  Patrick Breiling ,  Jennifer O'Loughlin ,  Mandyam Sriram ,  George Andrew Antonelli ,  Bart van Schravendijk

IPC分类号： C23C16/56 ,  H05H1/24 ,  C23C16/04 ,  B05D3/06

CPC分类号： C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

摘要： Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

摘要翻译： 描述了用于在原位（即，没有真空断裂或空气曝光）在工艺工具中沉积薄膜叠层的方法和硬件。 在一个实例中，描述了一种在基板上使用等离子体在处理站中原位沉积包括不同组成的膜的膜堆叠的方法，所述方法包括在第一等离子体激活膜沉积阶段中沉积 在所述基板上具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

公开(公告)号：US08980769B1

公开(公告)日：2015-03-17

申请号：US11977792

申请日：2007-10-25

申请人： Jason Haverkamp ,  Dennis Hausmann ,  Kevin McLaughlin ,  Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

发明人： Jason Haverkamp ,  Dennis Hausmann ,  Kevin McLaughlin ,  Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

IPC分类号： H01L21/00 ,  H01L21/331

CPC分类号： C23C16/56 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

摘要： The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

摘要翻译： 本发明提供了在衬底上制备低k介电材料的改进方法。 该方法涉及多种操作紫外线固化方法，其中UV强度，晶片衬底温度，UV光谱分布和其它条件可以在每个操作中独立调制。 可以将脉冲或甚至同时施​​加到同一晶片上。 在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。 在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。