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公开(公告)号：US08546785B2
公开(公告)日：2013-10-01
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US20110240951A1
公开(公告)日：2011-10-06
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US08203171B2
公开(公告)日：2012-06-19
申请号：US12754300
申请日：2010-04-05
申请人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/74
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/734
摘要： A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
摘要翻译： 基于石墨烯的忆阻器包括第一电极，与第一电极相邻的有缺陷的石墨烯层，包含与缺陷石墨烯层相邻的多个离子的忆阻材料，与该阻滞材料相邻的第二电极以及产生电 在第一和第二电极之间。 在电场的影响下，忆阻材料中的离子在第二电极和缺陷石墨烯层之间形成离子传导通道。
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公开(公告)号：US20110240947A1
公开(公告)日：2011-10-06
申请号：US12754300
申请日：2010-04-05
申请人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/734
摘要： A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
摘要翻译： 基于石墨烯的忆阻器包括第一电极，与第一电极相邻的有缺陷的石墨烯层，包含与缺陷石墨烯层相邻的多个离子的忆阻材料，与该阻滞材料相邻的第二电极以及产生电 在第一和第二电极之间。 在电场的影响下，忆阻材料中的离子在第二电极和缺陷石墨烯层之间形成离子传导通道。
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公开(公告)号：US08294132B2
公开(公告)日：2012-10-23
申请号：US12750351
申请日：2010-03-30
申请人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/146 , H01L45/149 , H01L45/165 , H01L45/1658
摘要： A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
摘要翻译： 石墨烯忆阻器包括第一电极，电耦合到第一电极的第二电极，散布在第一和第二电极之间的有源区，调节离子通过有源区迁移的势垒高度的有缺陷的石墨烯结构，快速扩散离子 在电场下迁移以改变石墨烯忆阻器的状态，以及产生电场的源。
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公开(公告)号：US20110240946A1
公开(公告)日：2011-10-06
申请号：US12750351
申请日：2010-03-30
申请人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/146 , H01L45/149 , H01L45/165 , H01L45/1658
摘要： A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
摘要翻译： 石墨烯忆阻器包括第一电极，电耦合到第一电极的第二电极，散布在第一和第二电极之间的有源区，调节离子通过有源区迁移的势垒高度的有缺陷的石墨烯结构，快速扩散离子 在电场下迁移以改变石墨烯忆阻器的状态，以及产生电场的源。
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公开(公告)号：US20120223286A1
公开(公告)日：2012-09-06
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L45/00
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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9.发明申请公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
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公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入 或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。
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