-
公开(公告)号:US5432047A
公开(公告)日:1995-07-11
申请号:US897626
申请日:1992-06-12
申请人: John C. Cheng , William D. Hinsberg, III , Robert T. Lynch, Jr. , Scott A. MacDonald , Lester A. Pederson , James S. Wong
发明人: John C. Cheng , William D. Hinsberg, III , Robert T. Lynch, Jr. , Scott A. MacDonald , Lester A. Pederson , James S. Wong
CPC分类号: G11B7/261 , Y10S430/146
摘要: An optical data storage device having a substrate has guide ridges, or reverse grooves, in a concentric or spiral shape formed thereon, and disposed in a plane parallel to and disposed from the substrate surface. The device further has pits formed approximately midway between the guide ridges and disposed in the substrate and having bottoms below the plane of the substrate surface. A method for manufacturing the optical data storage device having both address pits and guide ridges is disclosed. A dual tone photosensitive material is applied to a substrate, exposed with a laser light source comprising two distinct wavelengths, and developed to provide a desired bipolar geometry thereon.
摘要翻译: 具有基板的光学数据存储装置具有形成在其上的同心或螺旋形状的导向脊或反向槽,并且设置在与基板表面平行并布置的平面中。 该装置还具有形成在导向脊之间的中间的凹坑并且设置在基板中并且具有在基板表面的平面下方的底部。 公开了一种具有地址坑和引导脊的光数据存储装置的制造方法。 将双色感光材料施加到基板上,用包括两个不同波长的激光光源曝光,并显影以在其上提供期望的双极几何形状。
-
公开(公告)号:US4398001A
公开(公告)日:1983-08-09
申请号:US360710
申请日:1982-03-22
IPC分类号: G03F7/26 , C08L61/00 , C08L61/04 , C08L61/06 , C08L61/10 , G03F7/038 , G03F7/039 , G03F7/20 , C08G2/02
CPC分类号: G03F7/039
摘要: A resist sensitive to electron beam (and X-ray) radiation but resistant to reactive ion etching is formulated from a novolac resin and a sensitizer which is a terpolymer of sulfur dioxide, an olefin is hydrocarbon and an unsaturated ether.
摘要翻译: 对电子束(和X射线)辐射敏感并且抗反应离子蚀刻的抗蚀剂由酚醛清漆树脂和作为二氧化硫,烯烃是不饱和醚的三元共聚物的敏化剂配制。
-
公开(公告)号:US4289573A
公开(公告)日:1981-09-15
申请号:US126913
申请日:1980-03-03
IPC分类号: G03F7/40 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号: G03F7/405
摘要: The resistance of a resist of plasma etching is enhanced by first cross-linking the resist and then contacting it with an aqueous solution of NaOH or KOH. The process is useful to form microcircuits having increased density of geometry.
摘要翻译: 通过首先交联抗蚀剂,然后使其与NaOH或KOH的水溶液接触,增强等离子体蚀刻抗蚀剂的电阻。 该方法可用于形成具有增加的几何密度的微电路。
-
公开(公告)号:US4464460A
公开(公告)日:1984-08-07
申请号:US508644
申请日:1983-06-28
申请人: Hiroyuki Hiraoka , Donald C. Hofer , Robert D. Miller , Lester A. Pederson , Carlton G. Willson
发明人: Hiroyuki Hiraoka , Donald C. Hofer , Robert D. Miller , Lester A. Pederson , Carlton G. Willson
IPC分类号: G03C5/00 , G03F7/075 , G03F7/09 , G03F7/26 , H01L21/027
CPC分类号: G03F7/094 , G03F7/0754
摘要: A process for making an image oxygen-reactive ion etch barrier using a polysilane that is resistant to resistive ion etching and is also a positive acting resist.
摘要翻译: 使用耐电阻离子蚀刻的聚硅烷制造图像氧反应离子蚀刻阻挡层的方法,也是正性抗蚀剂。
-
公开(公告)号:US4074031A
公开(公告)日:1978-02-14
申请号:US721259
申请日:1976-09-08
CPC分类号: G03F7/039
摘要: Positive electron beam resists are prepared by reacting a film which is a copolymer of methyl methacrylate and methacrylic acid with a tertiary amine.
摘要翻译: 通过使作为甲基丙烯酸甲酯和甲基丙烯酸的共聚物的膜与叔胺反应来制备正电子束抗蚀剂。
-
-
-
-