公开(公告)号：US20220336493A1

公开(公告)日：2022-10-20

申请号：US17854072

申请日：2022-06-30

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Keiichi SAWA ,  Kazuhisa MATSUDA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L21/324 ,  H01L23/532 ,  H01L21/28

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

公开(公告)号：US20220246640A1

公开(公告)日：2022-08-04

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi SAWA ,  Kazuhiro MATSUO ,  Kazuhisa MATSUDA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Shinji MORI ,  Masayuki TANAKA ,  Kenichiro TORATANI ,  Atsushi TAKAHASHI ,  Shouji HONDA

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11519

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.