-
公开(公告)号：US20190333794A1
公开(公告)日：2019-10-31
申请号：US16019341
申请日：2018-06-26
Applicant: KLA-Tencor Corporation
Inventor： Pradeep Vukkadala , Mark D. Smith , Ady Levy , Prasanna Dighe , Dieter Mueller
IPC: H01L21/67 , G01B11/06 , G01N21/45 , G05B19/4097 , G03F7/20
Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.
-
公开(公告)号：US20160327605A1
公开(公告)日：2016-11-10
申请号：US15148116
申请日：2016-05-06
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Sanjay Kapasi , Mark D. Smith , Ady Levy
Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.
Abstract translation: 本文提供了用于监测表征在半导体晶片上的不同位置处制造的一组热点结构的参数的方法和系统。 热点结构是对工艺变化表现出敏感性并且对必须执行的允许的工艺变化产生限制以防止器件故障和低产量的器件结构。 采用经过训练的热点测量模型来接收由一个或多个测量系统在一个或多个测量目标产生的测量数据，并直接确定一个或多个热点参数的值。 对热点测量模型进行训练，以建立所考虑的热点结构的一个或多个特征与相同测量结果相关联的测量数据与相同晶片上的至少一个测量目标的测量数据之间的功能关系。 基于测量的热点参数的值来调整制造工艺参数。
-
公开(公告)号：US20150110249A1
公开(公告)日：2015-04-23
申请号：US14515322
申请日：2014-10-15
Applicant: KLA-Tencor Corporation
Inventor： Michael S. Bakeman , Andrei V. Shchegrov , Ady Levy , Guorong V. Zhuang , John J. Hench
IPC: G01N23/201 , G01N33/00
CPC classification number: G01N23/201 , G01N2033/0095
Abstract: Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.
Abstract translation: 公开了用于执行小角度X射线散射测量的装置和方法。 该系统包括用于产生X射线的X射线源和照明光学器件，用于收集并折射所产生的X射线的一部分朝着半导体样本上的特定聚焦点以多个入射光束的形式反射或折射 多个不同的入射角（AOI）。 该系统还包括传感器，用于响应于在不同AOI处的样品上的入射光束而从样品收集输出的X射线束，以及控制器，被配置为控制X射线源和照明光学器件的接收和接收 输出x射线束并从这样的输出x射线产生图像。
-
公开(公告)号：US20130096873A1
公开(公告)日：2013-04-18
申请号：US13652232
申请日：2012-10-15
Applicant: KLA-Tencor Corporation
Inventor： Eliezer Rosengaus , Ady Levy , Kris Bhaskar
CPC classification number: G01C15/002
Abstract: Systems and methods for acquiring information for a construction site are provided. One system includes a base unit positioned within a construction site by a user. A computer subsystem of the base unit determines a position of the base unit with respect to the construction site. The system also includes a measurement unit moved within the construction site by a user. The measurement unit includes one or more elements configured to interact with light in a known manner. An optical subsystem of the base unit directs light to the element(s) and detects the light after interacting with the element(s). The computer subsystem is configured to determine a position and pose of the measurement unit with respect to the base unit based on the detected light. The measurement unit includes a measurement device used by the measurement unit or the base unit to determine information for the construction site.
Abstract translation: 提供了获取施工现场信息的系统和方法。 一个系统包括由用户定位在施工现场内的基座单元。 基座的计算机子系统确定基座相对于施工现场的位置。 该系统还包括由用户在施工现场内移动的测量单元。 测量单元包括被配置为以已知方式与光相互作用的一个或多个元件。 基本单元的光学子系统将光引导到元件，并在与元件相互作用之后检测光。 计算机子系统被配置为基于检测到的光来确定测量单元相对于基本单元的位置和姿态。 测量单元包括由测量单元或基座单元用于确定施工现场的信息的测量装置。
-
公开(公告)号：US10030965B2
公开(公告)日：2018-07-24
申请号：US15148116
申请日：2016-05-06
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Sanjay Kapasi , Mark D. Smith , Ady Levy
Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.
-
Patent Agency Ranking
公开(公告)号：US09222771B2
公开(公告)日：2015-12-29
申请号：US13652232
申请日：2012-10-15
Applicant: KLA-Tencor Corporation
Inventor： Eliezer Rosengaus , Ady Levy , Kris Bhaskar
CPC classification number: G01C15/002
Abstract: Systems and methods for acquiring information for a construction site are provided. One system includes a base unit positioned within a construction site by a user. A computer subsystem of the base unit determines a position of the base unit with respect to the construction site. The system also includes a measurement unit moved within the construction site by a user. The measurement unit includes one or more elements configured to interact with light in a known manner. An optical subsystem of the base unit directs light to the element(s) and detects the light after interacting with the element(s). The computer subsystem is configured to determine a position and pose of the measurement unit with respect to the base unit based on the detected light. The measurement unit includes a measurement device used by the measurement unit or the base unit to determine information for the construction site.
Abstract translation: 提供了获取施工现场信息的系统和方法。 一个系统包括由用户定位在施工现场内的基座单元。 基座的计算机子系统确定基座相对于施工现场的位置。 该系统还包括由用户在施工现场内移动的测量单元。 测量单元包括被配置为以已知方式与光相互作用的一个或多个元件。 基本单元的光学子系统将光引导到元件，并在与元件相互作用之后检测光。 计算机子系统被配置为基于检测到的光来确定测量单元相对于基本单元的位置和姿态。 测量单元包括由测量单元或基座单元用于确定施工现场的信息的测量装置。
-
公开(公告)号：US20140316730A1
公开(公告)日：2014-10-23
申请号：US14252323
申请日：2014-04-14
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Jonathan M. Madsen , Stilian Ivanov Pandev , Ady Levy , Daniel Kandel , Michael E. Adel , Ori Tadmor
IPC: H01L21/66
CPC classification number: H01L22/12 , H01L22/20 , H01L22/30 , H01L2924/0002 , H01L2924/00
Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.
Abstract translation: 提出了直接在器件结构上执行半导体测量的方法和系统。 基于从至少一个设备结构收集的测量训练数据创建测量模型。 训练后的测量模型用于直接从其他晶圆的器件结构收集的测量数据中计算过程参数值，结构参数值或两者。 在一些示例中，收集来自多个目标的测量数据用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。
-
公开(公告)号：US10451412B2
公开(公告)日：2019-10-22
申请号：US15613119
申请日：2017-06-02
Applicant: KLA-Tencor Corporation
Inventor： Michael Adel , Walter D. Mieher , Ibrahim Abdulhalim , Ady Levy , Michael Friedmann
Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure multiple measured optical signals from multiple periodic targets on the sample, and the targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures A scatterometry overlay technique is used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets. The scatterometry overlay technique is a phase based technique, and the imaging optical system is configured to have an illumination and/or collection numerical aperture (NA) and/or spectral band selected so that a specific diffraction order is collected and measured for the plurality of measured optical signals. In one aspect, the number of periodic targets equals half the number of unknown parameters.
-
公开(公告)号：US10409171B2
公开(公告)日：2019-09-10
申请号：US15867485
申请日：2018-01-10
Applicant: KLA-Tencor Corporation
Inventor： Michael E. Adel , Amnon Manassen , William Pierson , Ady Levy , Pradeep Subrahmanyan , Liran Yerushalmi , DongSub Choi , Hoyoung Heo , Dror Alumot , John Charles Robinson
Abstract: A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.
-
公开(公告)号：US20180096906A1
公开(公告)日：2018-04-05
申请号：US15707927
申请日：2017-09-18
Applicant: KLA-Tencor Corporation
Inventor： Ady Levy , Mark D. Smith
Abstract: A system is disclosed. The system includes a tool cluster. The tool cluster includes a first deposition tool configured to deposit a first layer on a wafer. The tool cluster additionally includes an interferometer tool configured to obtain one or more measurements of the wafer. The tool cluster additionally includes a second deposition tool configured to deposit a second layer on the wafer. The tool cluster additionally includes a vacuum assembly. One or more correctables configured to adjust at least one of the first deposition tool or the second deposition tool are determined based on the one or more measurements. The one or more measurements are obtained between the deposition of the first layer and the deposition of the second layer without breaking the vacuum generated by the vacuum assembly.
-
-
-
-
-
-
-
-
-
Search Results
27
records
(took 0.017 seconds)
