公开(公告)号：US10340165B2

公开(公告)日：2019-07-02

申请号：US15451038

申请日：2017-03-06

Applicant: KLA-Tencor Corporation

Inventor： Jeremy Nabeth ,  Onur N. Demirer ,  Ramkumar Karur-Shanmugam ,  Choon (George) Hoong Hoo ,  Christian Sparka ,  Hoyoung Heo ,  Stuart Sherwin ,  Fatima Anis ,  Mark D. Smith ,  William Pierson

IPC: G01C1/06 ,  H01L21/67 ,  G01B11/27 ,  G06F17/50 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00

Abstract: A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.

公开(公告)号：US10691028B2

公开(公告)日：2020-06-23

申请号：US15256410

申请日：2016-09-02

Applicant: KLA-Tencor Corporation

Inventor： Hoyoung Heo ,  William Pierson ,  Jeremy Nabeth ,  Sanghuck Jeon ,  Onur N. Demirer ,  Miguel Garcia-Medina ,  Soujanya Vuppala

IPC: G06F17/50 ,  G03F7/20

Abstract: Methods and systems for providing overlay corrections are provided. A method may include: selecting an overlay model configured to perform overlay modeling for a wafer; obtaining a first set of modeled results from the overlay model, the first set of modeled results indicating adjustments applicable to a plurality of term coefficients of the overlay model; calculating a significance matrix indicating the significance of the plurality of term coefficients; identifying at least one less significant term coefficient among the plurality of term coefficients based on the calculated significance matrix; obtaining a second set of modeled results from the overlay model, the second set of modeled results indicating adjustments applicable to the plurality of term coefficients except for the identified at least one less significant term coefficient; and providing the second set of modeled results to facilitate overlay correction.

公开(公告)号：US10409171B2

公开(公告)日：2019-09-10

申请号：US15867485

申请日：2018-01-10

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Amnon Manassen ,  William Pierson ,  Ady Levy ,  Pradeep Subrahmanyan ,  Liran Yerushalmi ,  DongSub Choi ,  Hoyoung Heo ,  Dror Alumot ,  John Charles Robinson

IPC: G03B27/00 ,  G03F7/20

Abstract: A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

公开(公告)号：US20180253017A1

公开(公告)日：2018-09-06

申请号：US15867485

申请日：2018-01-10

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Amnon Manassen ,  William Pierson ,  Ady Levy ,  Pradeep Subrahmanyan ,  Liran Yerushalmi ,  DongSub Choi ,  Hoyoung Heo ,  Dror Alumot ,  John Charles Robinson

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/7085

Abstract: A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

公开(公告)号：US20170287754A1

公开(公告)日：2017-10-05

申请号：US15451038

申请日：2017-03-06

Applicant: KLA-Tencor Corporation

Inventor： Jeremy Nabeth ,  Onur N. Demirer ,  Ramkumar Karur-Shanmugam ,  Choon George Hoong Hoo ,  Christian Sparka ,  Hoyoung Heo ,  Stuart Sherwin ,  Fatima Anis ,  Mark D. Smith ,  William Pierson

IPC: H01L21/67 ,  G06F17/50 ,  G01B11/27

CPC classification number: H01L21/67259 ,  G01B11/002 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70633 ,  G03F9/7046 ,  G06F17/5009

Abstract: A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.

公开(公告)号：US20170219928A1

公开(公告)日：2017-08-03

申请号：US15256410

申请日：2016-09-02

Applicant: KLA-Tencor Corporation

Inventor： Hoyoung Heo ,  William Pierson ,  Jeremy Nabeth ,  Sanghuck Jeon ,  Onur N. Demirer ,  Miguel Garcia-Medina ,  Soujanya Vuppala

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G03F7/705 ,  G03F7/70633

Abstract: Methods and systems for providing overlay corrections are provided. A method may include: selecting an overlay model configured to perform overlay modeling for a wafer; obtaining a first set of modeled results from the overlay model, the first set of modeled results indicating adjustments applicable to a plurality of term coefficients of the overlay model; calculating a significance matrix indicating the significance of the plurality of term coefficients; identifying at least one less significant term coefficient among the plurality of term coefficients based on the calculated significance matrix; obtaining a second set of modeled results from the overlay model, the second set of modeled results indicating adjustments applicable to the plurality of term coefficients except for the identified at least one less significant term coefficient; and providing the second set of modeled results to facilitate overlay correction.