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公开(公告)号：US20160320319A1
公开(公告)日：2016-11-03
申请号：US15141453
申请日：2016-04-28
IPC分类号： G01N23/207
摘要： Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.
摘要翻译： 介绍了基于x射线衍射测量数据进行装置结构叠加和边缘放置误差的方法和系统。 基于在多个不同的入射角和方位角测量的每个x射线衍射级中的强度变化来估计度量目标的不同层之间的叠加误差。 叠加的估计涉及通用顺序的强度调制的参数化，使得通过一组基本函数描述低频形状调制，并且通过包括表示覆盖的参数的仿射循环函数来描述高频覆盖调制。 除了覆盖之外，基于测量模型的拟合分析与测量的衍射级的强度来估计度量目标的形状参数。 在一些示例中，同时执行叠加的估计和一个或多个形状参数值的估计。
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2.发明申请METHODS AND APPARATUS FOR MEASURING SEMICONDUCTOR DEVICE OVERLAY USING X-RAY METROLOGY 有权使用X射线测量法测量半导体器件叠加的方法和装置公开(公告)号：US20150117610A1
公开(公告)日：2015-04-30
申请号：US14521966
申请日：2014-10-23
IPC分类号： G03F7/20 , G01N23/201 , G01N21/95 , G01N23/203
CPC分类号： G03F7/70633 , G01N21/9501 , H01L22/12
摘要： Disclosed are apparatus and methods for determining overlay error in a semiconductor target. For illumination x-rays having at least one angle of incidence (AOI), a correlation model is obtained, and the correlation model correlates overlay error of a target with a modulation intensity parameter for each of one or more diffraction orders (or a continuous diffraction intensity distribution) for x-rays scattered from the target in response to the illumination x-rays. A first target is illuminated with illumination x-rays having the at least one AOI and x-rays that are scattered from the first target in response to the illumination x-rays are collected. An overlay error of the first target is determined based on the modulation intensity parameter of the x-rays collected from the first target for each of the one or more diffraction orders (or the continuous diffraction intensity distribution) and the correlation model.
摘要翻译： 公开了用于确定半导体目标中的重叠误差的装置和方法。 对于具有至少一个入射角（AOI）的照明x射线，获得相关模型，并且相关模型将目标的重叠误差与一个或多个衍射级（或连续衍射中的每一个）的调制强度参数相关联 强度分布），用于响应于照射x射线从目标散射的X射线。 利用具有至少一个AOI的照明x射线照射第一个目标，并且响应于照射x射线而从第一个目标物体散射的X射线被照射。 基于对于一个或多个衍射级（或连续衍射强度分布）和相关模型中的每一个而从第一目标收集的x射线的调制强度参数来确定第一目标的覆盖误差。
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公开(公告)号：US20150110249A1
公开(公告)日：2015-04-23
申请号：US14515322
申请日：2014-10-15
IPC分类号： G01N23/201 , G01N33/00
CPC分类号： G01N23/201 , G01N2033/0095
摘要： Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.
摘要翻译： 公开了用于执行小角度X射线散射测量的装置和方法。 该系统包括用于产生X射线的X射线源和照明光学器件，用于收集并折射所产生的X射线的一部分朝着半导体样本上的特定聚焦点以多个入射光束的形式反射或折射 多个不同的入射角（AOI）。 该系统还包括传感器，用于响应于在不同AOI处的样品上的入射光束而从样品收集输出的X射线束，以及控制器，被配置为控制X射线源和照明光学器件的接收和接收 输出x射线束并从这样的输出x射线产生图像。
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4.发明申请公开(公告)号：US20140019097A1
公开(公告)日：2014-01-16
申请号：US13935275
申请日：2013-07-03
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/70 , G03F7/70608 , G03F7/70625
摘要： Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. Models of the response of the specimen to at least two different measurement technologies share at least one common geometric parameter. In some embodiments, a model building and analysis engine performs x-ray and optical analyses wherein at least one common parameter is coupled during the analysis. The fitting of the response models to measured data can be done sequentially, in parallel, or by a combination of sequential and parallel analyses. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data. For example, a geometric model of the specimen is restructured based on the fit between the response models and corresponding measurement data.
摘要翻译： 样本的结构参数是通过将样本的响应拟合到通过不同测量技术在综合分析中收集的测量结果来确定的。 样本对至少两种不同测量技术的响应模型共享至少一个常见的几何参数。 在一些实施例中，模型构建和分析引擎执行x射线和光学分析，其中在分析期间耦合至少一个公共参数。 响应模型对测量数据的拟合可以顺序，并行或顺序和并行分析的组合进行。 在另一方面，响应模型的结构基于模型与相应测量数据之间的拟合质量而改变。 例如，基于响应模型和对应的测量数据之间的拟合来重组样本的几何模型。
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公开(公告)号：US10801975B2
公开(公告)日：2020-10-13
申请号：US13887343
申请日：2013-05-05
IPC分类号： G01N23/201 , G01N21/84 , G03F7/20 , G01N21/956
摘要： Methods and systems for performing simultaneous optical scattering and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with optical scatterometry measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS and optical scatterometry measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and optical scatterometry measurements based on models that share at least one geometric parameter. The fitting can be performed sequentially or in parallel.
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公开(公告)号：US10545104B2
公开(公告)日：2020-01-28
申请号：US15141453
申请日：2016-04-28
IPC分类号： G01N23/207
摘要： Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.
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公开(公告)号：US10012606B1
公开(公告)日：2018-07-03
申请号：US14748108
申请日：2015-06-23
发明人： Michael S. Bakeman , Xuena Zhang
IPC分类号： G01N23/227 , G01N23/223 , G01N23/2273 , G01N23/207
CPC分类号： G01N23/2273 , G01N23/2076 , G01N23/223 , H01L22/12
摘要： Methods and systems for performing relatively high energy X-ray Fluorescence (XRF) measurements and relatively low energy X-ray photoelectron spectroscopy (XPS) measurements over a desired inspection area of a specimen are presented. Combined XPS and XRF measurements of a specimen are achieved with illumination tailored to each respective metrology technique. A high brightness, high energy x-ray illumination source is employed in combination with one or more secondary fluorescence targets. The high energy x-ray illumination source supplies high energy x-ray illumination to a specimen to perform high energy XRF measurements. In addition, the high energy x-ray illumination source supplies high energy x-ray illumination to one or more secondary fluorescence targets. The one or more secondary fluorescence targets absorb some of the high energy x-ray photons and emit x-ray emission lines at a lower energy. The relatively low energy x-ray illumination is directed to the specimen to perform relatively low energy XPS measurements.
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公开(公告)号：US09778213B2
公开(公告)日：2017-10-03
申请号：US14461416
申请日：2014-08-17
IPC分类号： G06F17/50 , G01N23/223 , G01N23/201
CPC分类号： G01N23/223 , G01N23/201 , G01N2223/6116
摘要： Methods and systems for performing simultaneous X-ray Fluorescence (XRF) and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with XRF measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and XRF measurements based on models that share at least one material parameter. The fitting can be performed sequentially or in parallel.
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公开(公告)号：US20130304424A1
公开(公告)日：2013-11-14
申请号：US13887343
申请日：2013-05-05
IPC分类号： G01N23/201 , G01N21/84
摘要： Methods and systems for performing simultaneous optical scattering and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with optical scatterometry measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS and optical scatterometry measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and optical scatterometry measurements based on models that share at least one geometric parameter. The fitting can be performed sequentially or in parallel.
摘要翻译： 提出了在样本的期望检查区域上执行同时光散射和小角X射线散射（SAXS）测量的方法和系统。 SAXS测量结合光学散射测量可以实现高吞吐量测量工具，增加测量能力。 x射线辐射的高能量性质穿透光学不透明的薄膜，掩埋结构，高纵横比结构以及包括许多薄膜层的器件。 平面样本的特定位置的SAXS和光学散射测量测量在多个不同的平面外取向进行。 这增加了测量灵敏度，降低了参数之间的相关性，并提高了测量精度。 此外，通过根据共享至少一个几何参数的模型拟合从SAXS和光学散射测量结果导出的数据集，可以更准确地解决样本参数值。 可以顺序地或并行地执行装配。
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公开(公告)号：US10324050B2
公开(公告)日：2019-06-18
申请号：US14994817
申请日：2016-01-13
IPC分类号： G01N23/20008
摘要： Methods and systems for optimizing measurement system parameter settings of an x-ray based metrology system are presented. X-ray based metrology systems employing an optimized set of measurement system parameters are used to measure structural, material, and process characteristics associated with different semiconductor fabrication processes with greater precision and accuracy. In one aspect, a set of values of one or more machine parameters that specify a measurement scenario is refined based at least in part on a sensitivity of measurement data to a previous set of values of the one or more machine parameters. The refinement of the values of the machine parameters is performed to maximize precision, maximize accuracy, minimize correlation between parameters of interest, or any combination thereof. Refinement of the machine parameter values that specify a measurement scenario can be used to optimize the measurement recipe to reduce measurement time and increase measurement precision and accuracy.
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