公开(公告)号：US20180076084A1

公开(公告)日：2018-03-15

申请号：US15416727

申请日：2017-01-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-Jun KIM ,  Sanghyeon KIM ,  Jae-Phil SHIM ,  Yeon-Su KIM ,  Heejeong LIM

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16

Abstract: A method for manufacturing a semiconductor device includes: forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from that of germanium (Ge) by a preset threshold or below; forming a germanium (Ge) layer on the sacrificial layer; forming an insulation layer on a second substrate; bonding the germanium (Ge) layer onto the insulation layer; and removing the sacrificial layer and the first substrate by etching the sacrificial layer in a state where the germanium (Ge) layer is bonded to the insulation layer. In this method, a germanium-on-insulator (GeOI) structure having various surface orientations may be formed by means of epitaxial lift-off (ELO), and a strain may be applied to the germanium (Ge) layer using a lattice constant of the sacrificial layer.

公开(公告)号：US20180350988A1

公开(公告)日：2018-12-06

申请号：US15955690

申请日：2018-04-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-jun KIM ,  Sanghyeon KIM ,  Jae-Phil SHIM

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/16 ,  H01L29/66

Abstract: Disclosed is a semiconductor device, which includes: forming a first channel layer including a Group III-V compound or germanium (Ge) and having a first semiconductor characteristics on a first substrate; forming a second channel layer including a Group III-V compound or germanium (Ge) and having a second semiconductor characteristics different from the first semiconductor characteristics on the first channel layer; forming a bonding layer containing an oxide on a second channel layer; allowing the bonding layer to be bound to the second substrate so that a structure including the bonding layer, the second channel layer, the first channel layer and the first substrate may be stacked on the second substrate; removing the first substrate stacked on the second substrate; and removing the first channel layer from a partial region of the structure stacked on the second substrate.

公开(公告)号：US20180082900A1

公开(公告)日：2018-03-22

申请号：US15631309

申请日：2017-06-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon KIM ,  Hyung-jun KIM ,  Jae-Phil SHIM ,  Seong Kwang KIM ,  Won Jun CHOI

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/7813 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/30617

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.