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公开(公告)号：US20180204973A1
公开(公告)日：2018-07-19
申请号：US15853778
申请日：2017-12-23
Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE
Inventor： Tak JEUNG , Won-Sik CHOI , Jun-Beom PARK , Jong-Hyeob BAEK
CPC classification number: H01L33/0079 , H01L22/20 , H01L25/0753 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/44 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: The present invention is intended to provide a light-emitting diode (LED) structure which can be easily transferred onto another substrate, a transfer assembly whose adhesive strength with LED structures can be maintained in spite of repetitive transfer processes, LED structures and a transfer assembly for selectively transferring the LED structures, and a transfer method using the same.
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公开(公告)号：US20180069153A1
公开(公告)日：2018-03-08
申请号：US15563468
申请日：2015-06-30
Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE
Inventor： Seung-Jae LEE , Sung-Chul CHOI , Jong-Hyeob BAEK , Seong-Ran JEON , Sang-Mook KIM , Tae Hoon CHUNG
CPC classification number: C22C38/04 , H01L33/0075 , H01L33/22 , H01L33/32
Abstract: A nitride semiconductor light-emitting device and a method for manufacturing same for improving the electrostatic discharge (ESD) characteristics of the nitride semiconductor light-emitting device. The light-emitting device includes an active layer formed flat using a low conductivity material, on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof, and a second conductive semiconductor layer, or has a v-pit structure on a junction surface between a second conductive semiconductor layer and an active layer formed flat using a low conductivity material on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof. Thus, a v-pit area has a thickness equal to or greater than a critical thickness and thus has very low conductivity, thereby preventing the flow of a current.
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