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公开(公告)号：US11658456B2
公开(公告)日：2023-05-23
申请号：US17318896
申请日：2021-05-12
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/0087 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0218 , H01S5/04253 , H01S5/04256 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4087 , H01S5/4093 , H01S5/005 , H01S5/0217 , H01S5/04257 , H01S5/4056
Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
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公开(公告)号：US20210344164A1
公开(公告)日：2021-11-04
申请号：US17318896
申请日：2021-05-12
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
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