公开(公告)号：US07072153B2

公开(公告)日：2006-07-04

申请号：US10400638

申请日：2003-03-28

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US07130164B2

公开(公告)日：2006-10-31

申请号：US11061513

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US07379278B2

公开(公告)日：2008-05-27

申请号：US11399449

申请日：2006-04-07

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及一对电极，电连接到所述磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。中间层具有包括第一区域的第一层，第一区域的电阻相对较高，第二区域的电阻为 比较低 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US20060181814A1

公开(公告)日：2006-08-17

申请号：US11399449

申请日：2006-04-07

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及一对电极，电连接到所述磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。中间层具有包括第一区域的第一层，第一区域的电阻相对较高，第二区域的电阻为 比较低 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US07038893B2

公开(公告)日：2006-05-02

申请号：US11045326

申请日：2005-01-31

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及电连接到所述磁阻效应膜的一对电极，以垂直于所述磁阻效应膜的膜平面提供感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US20050128650A1

公开(公告)日：2005-06-16

申请号：US11045326

申请日：2005-01-31

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及电连接到所述磁阻效应膜的一对电极，以垂直于所述磁阻效应膜的膜平面提供感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US07145754B2

公开(公告)日：2006-12-05

申请号：US11061635

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层，以及电连接到所述磁阻效应膜的一对电极，以提供垂直于所述磁阻效应膜的膜平面的感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US20050141144A1

公开(公告)日：2005-06-30

申请号：US11061635

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层，以及电连接到所述磁阻效应膜的一对电极，以提供垂直于所述磁阻效应膜的膜平面的感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US20050135018A1

公开(公告)日：2005-06-23

申请号：US11061513

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US07443004B2

公开(公告)日：2008-10-28

申请号：US11283873

申请日：2005-11-22

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： H01L29/82

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。