公开(公告)号：US07130164B2

公开(公告)日：2006-10-31

申请号：US11061513

申请日：2005-02-22

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US07071522B2

公开(公告)日：2006-07-04

申请号：US10887080

申请日：2004-07-09

Applicant: Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

Inventor： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC: H01L29/82 ,  H01L43/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

Abstract: In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

公开(公告)号：US07443004B2

公开(公告)日：2008-10-28

申请号：US11283873

申请日：2005-11-22

Applicant: Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

Inventor： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC: H01L29/82

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

Abstract: In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

Abstract translation: 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。

公开(公告)号：US07072153B2

公开(公告)日：2006-07-04

申请号：US10400638

申请日：2003-03-28

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US20090034134A1

公开(公告)日：2009-02-05

申请号：US12236331

申请日：2008-09-23

Applicant: Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koul ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

Inventor： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koul ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC: G11B5/33

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

Abstract translation: 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层，该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层，具有响应于外部磁性的磁化方向变化的磁性材料膜 以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。 该元件还包括电连接到磁阻效应膜的一对电极，以提供垂直于磁阻效应膜的膜平面的感测电流。 被钉扎层和自由层中的至少一个可以包括薄膜插入层。 非磁性金属中间层包括电阻调节层，其包含氧化物，氮化物和氟化物中的至少一种，薄膜插入层包括选自铁（Fe），钴（Co）和镍中的至少一种元素 （Ni）。

公开(公告)号：US07379278B2

公开(公告)日：2008-05-27

申请号：US11399449

申请日：2006-04-07

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

Abstract translation: 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及一对电极，电连接到所述磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。中间层具有包括第一区域的第一层，第一区域的电阻相对较高，第二区域的电阻为 比较低 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US20060181814A1

公开(公告)日：2006-08-17

申请号：US11399449

申请日：2006-04-07

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/127 ,  G11B5/33

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film, The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

Abstract translation: 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及一对电极，电连接到所述磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。中间层具有包括第一区域的第一层，第一区域的电阻相对较高，第二区域的电阻为 比较低 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US07038893B2

公开(公告)日：2006-05-02

申请号：US11045326

申请日：2005-01-31

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

Abstract translation: 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及电连接到所述磁阻效应膜的一对电极，以垂直于所述磁阻效应膜的膜平面提供感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US20050128650A1

公开(公告)日：2005-06-16

申请号：US11045326

申请日：2005-01-31

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

Abstract translation: 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层 固定层和自由层; 以及电连接到所述磁阻效应膜的一对电极，以垂直于所述磁阻效应膜的膜平面提供感测电流。 中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。 当电流通过第一层时，感测电流优先流过第二区域。 或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域 可以在第一层中设置35原子％以上。

公开(公告)号：US06751846B2

公开(公告)日：2004-06-22

申请号：US10401869

申请日：2003-03-31

Applicant: Susumu Hashimoto ,  Michiko Hara ,  Tomohiko Nagata ,  Kohichi Tateyama ,  Masatoshi Yoshikawa ,  Takeo Sakakubo ,  Hiroaki Yoda ,  Akio Hori ,  Takashi Koizumi

Inventor： Susumu Hashimoto ,  Michiko Hara ,  Tomohiko Nagata ,  Kohichi Tateyama ,  Masatoshi Yoshikawa ,  Takeo Sakakubo ,  Hiroaki Yoda ,  Akio Hori ,  Takashi Koizumi

IPC: G11B5127

CPC classification number: G11B5/313 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967 ,  Y10T29/49044

Abstract: A method for manufacturing a magnetic head which includes a lower write pole having a projection, an upper write pole having a projection opposed to the projection of the lower write pole, and a magnetic gap interposed between the projection of the upper write pole and the projection of the lower write pole, comprising: a first step of making the magnetic gap on the projection of the lower write pole; a second step of making a non-magnetic material layer on the lower write pole, the non-magnetic material layer having a projection on its top surface in positional alignment with the projection of the lower write pole; a third step of making a mask layer on the non-magnetic material layer, the mask layer having an opening in which the top surface of the projection of the non-magnetic material layer is exposed; a fourth step of making a curved recess in the non-magnetic material layer by isotropically etching the non-magnetic material layer through the opening of the mask layer; a fifth step of making an approximately tapered recess down from the bottom of the curved recess by anisotropically etching the non-magnetic material layer through the opening of the mask layer; and a sixth step of making the upper write pole by burying a magnetic material in the tapered recess and the curved recess is provided.

Abstract translation: 一种用于制造磁头的方法，该磁头包括具有突出部的下部写入极，具有与下部写入磁极的突起相对的突出部的上部写入磁极，以及插入在上部写入磁极和突起之间的磁隙 包括：使下部写入极的投影上的磁隙形成的第一步骤; 在下写入磁极上制作非磁性材料层的第二步骤，非磁性材料层在其顶表面上具有与下写入磁极的突起位置对准的突起; 在非磁性材料层上形成掩模层的第三步骤，所述掩模层具有露出所述非磁性材料层的突起的顶表面的开口; 通过所述掩模层的开口对所述非磁性材料层进行各向同性蚀刻来制造所述非磁性材料层中的弯曲凹部的第四工序; 第五步骤，通过通过掩模层的开口各向异性蚀刻非磁性材料层，从弯曲凹槽的底部向下形成大致锥形的凹陷; 并且提供通过将磁性材料埋入锥形凹部和弯曲凹部中来制造上部写入极的第六步骤。