Reflection plate for semiconductor heat treatment and manufacturing method thereof
    1.
    发明授权
    Reflection plate for semiconductor heat treatment and manufacturing method thereof 失效
    半导体热处理用反射板及其制造方法

    公开(公告)号:US07336892B2

    公开(公告)日:2008-02-26

    申请号:US10391583

    申请日:2003-03-20

    IPC分类号: F21V7/00 G02F1/1335

    CPC分类号: H01L21/67115 H01L21/68757

    摘要: It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 μm, said at least one side 2a formed grooves 2c therein.

    摘要翻译: 提供了半导体热处理反射板,其通过控制异物的吸附和反应的产生而耐裂纹或变形。 用于半导体热处理的所述反射板1由光学可透射材料的盘形或环形板和密封在所述盘形或环形板上的无机材料板2组成,其中所述无机 材料具有至少一侧与光学可透射材料的所述板接触,所述至少一个侧面2a具有Ra 0.1至10.0μm的表面粗糙度,所述至少一个侧面2a在其中形成沟槽2c。

    Heat treatment apparatus
    10.
    发明授权
    Heat treatment apparatus 有权
    热处理设备

    公开(公告)号:US07311520B2

    公开(公告)日:2007-12-25

    申请号:US10528704

    申请日:2003-08-29

    IPC分类号: F27D11/00

    CPC分类号: H01L21/67109

    摘要: The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.

    摘要翻译: 本发明是一种热处理单元,包括:上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部,形成在反应管的上部,气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元,用于加热由要处理的基板支撑构件支撑的待处理基板。 所述加热单元具有:设置在所述反应管周围的第一加热部,配置在所述排气单元连接部周围的第二加热部,配置在所述反应管的上部的第三加热部, 反应管的下部,以及配置在被处理基板的支撑部件的下方的第五加热部。