公开(公告)号：US20240251559A1

公开(公告)日：2024-07-25

申请号：US18624967

申请日：2024-04-02

Applicant: Kioxia Corporation

Inventor： Takashi ISHIDA ,  Yoshiaki FUKUZUMI ,  Takayuki OKADA ,  Masaki TSUJI

IPC: H10B43/27 ,  H01L29/10 ,  H01L29/423 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  H01L29/1037 ,  H01L29/4234 ,  H10B43/10 ,  H10B43/35

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

公开(公告)号：US20210391011A1

公开(公告)日：2021-12-16

申请号：US17190856

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Takashi ISHIDA ,  Hiroshi KANNO

IPC: G11C16/04 ,  G11C16/30 ,  G11C16/14 ,  G11C16/24 ,  G11C16/08

Abstract: A semiconductor storage device includes a plurality of memory cell transistors, a first wiring electrically connected to the plurality of memory cell transistors, and an erasing circuitry. The erasing circuitry is configured to erase data stored in the memory cell transistors by applying a first voltage to the first wiring, and apply the first voltage such that the first voltage rises to a first value, then falls from the first value to a second value, and is then maintained at the second value.

公开(公告)号：US20230066475A1

公开(公告)日：2023-03-02

申请号：US17549274

申请日：2021-12-13

Applicant: Kioxia Corporation

Inventor： Shun SHIMIZU ,  Takashi ISHIDA

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L23/528

Abstract: A semiconductor storage device includes: a first stack having a first insulation film and a first conductive film alternately stacked in a first direction; a plurality of first column portions respectively including a first semiconductor portion extending in the first stack in the first direction and a charge trapping film provided on an outer circumferential surface of the first semiconductor portion; and a first isolation portion penetrating through an upper-layer portion of the first stack in the first direction, extending in a second direction that crosses the first direction, including a second insulation film and a third insulation film arranged via the second insulation film, and configured to electrically isolate the first conductive film included in the upper-layer portion of the first stack in a third direction that crosses the first and second directions.

公开(公告)号：US20210273055A1

公开(公告)日：2021-09-02

申请号：US17019683

申请日：2020-09-14

Applicant: Kioxia Corporation

Inventor： Naomi YANAI ,  Yasuhito YOSHIMIZU ,  Takashi ISHIDA

IPC: H01L29/10 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  H01L29/788

Abstract: A semiconductor storage device according to the present embodiment includes a first semiconductor layer containing impurities. A stacked body is provided above the first semiconductor layer and includes insulating layers and conductive layers that are alternately stacked. A semiconductor body penetrates through the stacked body in a stacking direction to reach the first semiconductor layer and includes a lower region on a side of the first semiconductor layer and an upper region positioned above the lower region. A charge accumulation part is provided between the semiconductor bodies and the conductive layers. An impurity concentration of the lower region of the semiconductor body is higher than that of the first semiconductor layer.

公开(公告)号：US20210074592A1

公开(公告)日：2021-03-11

申请号：US16811065

申请日：2020-03-06

Applicant: Kioxia Corporation

Inventor： Tomonari SHIODA ,  Takashi ISHIDA

IPC: H01L21/8234 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/535

Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate including a first surface, a first contact part provided at a deeper level than the first surface, and a second contact part protruding up to a higher level than the first surface from the first contact part; a stacked body in which insulating layers and electrode layers are alternately stacked on the first surface; and a semiconductor film extending, on the second contact part, in the stacked body in a first direction perpendicular to the first surface. At an interface between the first contact part and the second contact part, a length of the first contact part in a second direction parallel to the first surface is larger than a length of the second contact part in the second direction.