摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.
摘要:
A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.
摘要:
Memory systems are disclosed that include a memory controller and an outbound link with the memory controller connected to the outbound link. The outbound link typically includes a number of conductive pathways that conduct memory signals from the memory controller to memory buffer devices in a first memory layer; and at least two memory buffer devices in a first memory layer. Each memory buffer device in the first memory layer typically is connected to the outbound link to receive memory signals from the memory controller.
摘要:
Memory systems are disclosed that include a memory controller and an outbound link with the memory controller connected to the outbound link. The outbound link typically includes a number of conductive pathways that conduct memory signals from the memory controller to memory buffer devices in a first memory layer; and at least two memory buffer devices in a first memory layer. Each memory buffer device in the first memory layer typically is connected to the outbound link to receive memory signals from the memory controller.