公开(公告)号：US20240188331A1

公开(公告)日：2024-06-06

申请号：US18376565

申请日：2023-10-04

Applicant: LG Display Co., Ltd.

Inventor： HongRak CHOI ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  G09G3/32

CPC classification number: H10K59/1216 ,  G09G3/32 ,  H10K59/1213 ,  G09G2300/0842

Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.

公开(公告)号：US20230145843A1

公开(公告)日：2023-05-11

申请号：US17876101

申请日：2022-07-28

Applicant: LG DISPLAY CO., LTD.

Inventor： HongRak CHOI ,  Dohyung LEE ,  ChanYong JEONG ,  KyungChul OK

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255

Abstract: A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

公开(公告)号：US20200184896A1

公开(公告)日：2020-06-11

申请号：US16690815

申请日：2019-11-21

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  KwangIl CHUN

IPC: G09G3/3266 ,  H01L27/12 ,  G09G3/3241

Abstract: A display device and a signal inversion device are provided. A display device includes: a display panel including: sub-pixels, and scan lines respectively connected to each of the sub-pixels, and light emission control lines respectively connected to each of the sub-pixels, a scan driver circuit for outputting respective scan signals to the scan lines, and a light emission control driver circuit for outputting respective light emission control signals to the light emission control lines, the light emission control driver circuit including: a resistance device electrically connected between: a first voltage node for receiving a first voltage, and an output node electrically connected to the light emission control lines, and a transistor electrically connected between the output node and a second voltage node for receiving a second voltage that is different from the first voltage, wherein an on/off operation of the transistor is controlled according to an input signal.

公开(公告)号：US20240282863A1

公开(公告)日：2024-08-22

申请号：US18634854

申请日：2024-04-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

公开(公告)号：US20240222518A1

公开(公告)日：2024-07-04

申请号：US18540557

申请日：2023-12-14

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  YoungHyun KO ,  DoHyung LEE ,  HongRak CHOI ,  ChanYong JEONG

IPC: H01L29/786 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L29/78633 ,  H01L29/78645 ,  H10K59/1213

Abstract: Embodiments of the present disclosure relate to a display device, which in more detail includes a substrate, a first gate electrode on the substrate, a first gate insulating film on the first gate electrode, an oxide semiconductor layer on the first gate insulating film, a second gate insulating film on the oxide semiconductor layer, a second gate electrode on the second gate insulating film, a first interface layer between the first gate insulating film and the oxide semiconductor layer, and a second interface layer between the second gate insulating film and the oxide semiconductor layer, wherein the first interface layer and the second interface layer contain mutually-different amounts of oxygen, thereby being able to provide a transistor structure having high reliability.

公开(公告)号：US20240215314A1

公开(公告)日：2024-06-27

申请号：US18458848

申请日：2023-08-30

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  H10K59/1201 ,  H10K59/1216 ,  H10K59/126

Abstract: Disclosed is a thin film transistor substrate including a first thin film transistor having a first gate electrode, a first active layer, a first source electrode, and a first drain electrode, and a second thin film transistor having a second gate electrode, a second active layer with a pattern different from a pattern of the first active layer, a second source electrode, and a second drain electrode. The first active layer includes a first lower active layer overlapping the first gate electrode and a first upper active layer disposed on the first lower active layer and not overlapping the first gate electrode. The second active layer includes a second lower active layer overlapping the second gate electrode and a second upper active layer disposed on the second lower active layer and overlapping the second gate electrode. A display apparatus including the same thin film transistor substrate is also disclosed.

公开(公告)号：US20210193839A1

公开(公告)日：2021-06-24

申请号：US17115603

申请日：2020-12-08

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US20230014588A1

公开(公告)日：2023-01-19

申请号：US17950024

申请日：2022-09-21

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US20220209019A1

公开(公告)日：2022-06-30

申请号：US17563887

申请日：2021-12-28

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

公开(公告)号：US20220029029A1

公开(公告)日：2022-01-27

申请号：US17498246

申请日：2021-10-11

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.