公开(公告)号：US20240047582A1

公开(公告)日：2024-02-08

申请号：US18226067

申请日：2023-07-25

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  Jaeyoon PARK ,  JungSeok SEO ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L29/417 ,  H10K59/121 ,  H10K59/126

CPC classification number: H01L29/78633 ,  H01L29/41733 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/126

Abstract: Discussed is a thin film transistor and a display apparatus. The thin film transistor can include a light shielding layer disposed on the substrate and formed of, or include conductive materials, an active layer disposed on the light shielding layer and overlapping the light shielding layer, a source electrode connected to a first side of the active layer and the light shielding layer, a drain electrode connected to a second side of the active layer, a gate electrode overlapping the active layer, and a connection layer disposed between the light shielding layer and the active layer, and electrically connecting the light shielding layer with the active layer.

公开(公告)号：US20230207702A1

公开(公告)日：2023-06-29

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/4908 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20240282863A1

公开(公告)日：2024-08-22

申请号：US18634854

申请日：2024-04-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

公开(公告)号：US20210202755A1

公开(公告)日：2021-07-01

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul OK ,  JungSeok SEO ,  PilSang YUN ,  Jiyong NOH ,  Jaeman JANG ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US20230140193A1

公开(公告)日：2023-05-04

申请号：US17977864

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  JungSeok SEO ,  Younghyun KO ,  Jaeyoon PARK ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.

公开(公告)号：US20200161475A1

公开(公告)日：2020-05-21

申请号：US16574725

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak CHO ,  JungSeok SEO ,  SeHee PARK ,  Jaeyoon PARK ,  SangYun SUNG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.

公开(公告)号：US20230317855A1

公开(公告)日：2023-10-05

申请号：US18127408

申请日：2023-03-28

Applicant: LG Display Co., Ltd. ,  Hanyang University Industry-University Cooperation Foundation

Inventor： JungSeok SEO ,  Jin Seong PARK ,  Jaeyoon PARK ,  Ki Lim HAN ,  Taewon HWANG ,  Won-Bum LEE

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H10K59/1213

Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.

公开(公告)号：US20210384357A1

公开(公告)日：2021-12-09

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20210202760A1

公开(公告)日：2021-07-01

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  JungSeok SEO ,  PilSang YUN ,  InTak CHO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US20230215955A1

公开(公告)日：2023-07-06

申请号：US17985634

申请日：2022-11-11

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon IM ,  Sungju CHOI ,  JungSeok SEO ,  Jaeyoon PARK ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L29/7869 ,  H01L27/3262 ,  H01L27/1214

Abstract: Embodiments of the disclosure relate to a thin film transistor array substrate and an electronic device including the same. Specifically, there may be provided a thin film transistor array substrate and an electronic device including the same, which may have high current characteristics in a small area, by including a first electrode, a first insulation film including a hole exposing a portion of an upper surface of the first electrode, an active layer contacting a portion of an upper surface of the first insulation film and the portion of the upper surface of the first electrode, a second insulation film disposed on the active layer, a gate electrode disposed on the second insulation film, a third insulation film disposed on the gate electrode, and a second electrode and a third electrode disposed on the third insulation film, spaced apart from each other, and electrically connected with the active layer, wherein the same signal is applied to the second electrode and the third electrode, wherein the active layer includes a first channel area and a second channel area spaced apart from each other, and wherein the first channel area and the second channel area include an area positioned on a side surface of the hole of the first insulation film.