公开(公告)号：US11594556B2

公开(公告)日：2023-02-28

申请号：US17378333

申请日：2021-07-16

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  DaeHwan Kim ,  JuHeyuck Baeck ,  Jiyong Noh

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3233

Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US11777037B2

公开(公告)日：2023-10-03

申请号：US17510066

申请日：2021-10-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  JungSeok Seo ,  SeHee Park ,  Jaeyoon Park ,  SangYun Sung

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

CPC classification number: H01L29/78642 ,  H01L27/1225 ,  H01L29/1037 ,  H01L29/78663

Abstract: A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.

公开(公告)号：US10943546B2

公开(公告)日：2021-03-09

申请号：US16694674

申请日：2019-11-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  PilSang Yun ,  Jeyong Jeon ,  Jiyong Noh ,  SeHee Park

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32

Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.

公开(公告)号：US12178090B2

公开(公告)日：2024-12-24

申请号：US16923444

申请日：2020-07-08

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  PilSang Yun

IPC: H10K59/131 ,  G09G3/3291 ,  H10K59/124

Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

公开(公告)号：US11557680B2

公开(公告)日：2023-01-17

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  JungSeok Seo ,  PilSang Yun ,  InTak Cho

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US11901461B2

公开(公告)日：2024-02-13

申请号：US17958167

申请日：2022-09-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  PilSang Yun ,  Jiyong Noh ,  InTak Cho

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/78696

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US11588027B2

公开(公告)日：2023-02-21

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak Cho ,  Jiyong Noh ,  Jaeman Jang ,  PilSang Yun ,  Jeyong Jeon

IPC: G09G3/32 ,  H01L29/40 ,  H01L27/12 ,  H01L29/786 ,  H01L21/765 ,  H01L29/66 ,  H01L21/02

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

公开(公告)号：US11495692B2

公开(公告)日：2022-11-08

申请号：US17121248

申请日：2020-12-14

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  PilSang Yun ,  Jiyong Noh ,  InTak Cho

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US11177390B2

公开(公告)日：2021-11-16

申请号：US16574725

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  JungSeok Seo ,  SeHee Park ,  Jaeyoon Park ,  SangYun Sung

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.

公开(公告)号：US11574843B2

公开(公告)日：2023-02-07

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  JungSeok Seo ,  PilSang Yun ,  Jiyong Noh ,  Jaeman Jang ,  InTak Cho

IPC: H01L21/8234 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).