公开(公告)号：US20160343878A1

公开(公告)日：2016-11-24

申请号：US15156263

申请日：2016-05-16

Applicant: LG Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Jangyeon KWON ,  Jonguk BAE ,  Juheyuck BAECK ,  Kyung PARK

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02584 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area.

Abstract translation: 本公开涉及具有包括金属氧化物半导体材料的高可靠性氧化物半导体材料的薄膜晶体管基板。 薄膜晶体管衬底包括衬底，设置在衬底上的栅电极，包括结合铟，镓和锌中的一种或多种氧化物和氧化物的掺杂材料的氧化物半导体材料的半导体层。 掺杂材料可以是15或16族气态元素。 半导体层具有与栅电极重叠的沟道区域，栅极绝缘层，从沟道区域的一侧延伸的源极区域和从沟道区域的另一侧延伸的漏极区域，源极连接到源极 区域和连接到漏极区域的漏电极。

公开(公告)号：US20160064465A1

公开(公告)日：2016-03-03

申请号：US14838631

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Seungmin LEE ,  Juheyuck BAECK ,  Hoiyong KWON ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/32 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

Abstract translation: 本发明涉及在相同基板上具有两种不同类型的半导体材料的薄膜晶体管基板和使用其的显示器。 所公开的显示器可以包括衬底，在衬底上具有多晶半导体材料的第一薄膜晶体管和在衬底上具有氧化物半导体材料的第二薄膜晶体管。

公开(公告)号：US20190123142A1

公开(公告)日：2019-04-25

申请号：US16210934

申请日：2018-12-05

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck BAECK ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L29/1054 ,  H01L27/1225 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US20190123120A1

公开(公告)日：2019-04-25

申请号：US16221203

申请日：2018-12-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Saeroonter OH ,  Jungsun BEAK ,  Seungmin LEE ,  Juheyuck BAECK ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

公开(公告)号：US20170330938A1

公开(公告)日：2017-11-16

申请号：US15531952

申请日：2015-12-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck BAECK ,  Jonguk BAE ,  Saeroonter OH ,  Dohyung LEE ,  Taeuk PARK

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/1054 ,  H01L27/1225 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US20160063924A1

公开(公告)日：2016-03-03

申请号：US14838659

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Jungsun BEAK ,  Seungmin LEE ,  Juheyuck BAECK ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: G09G3/32 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  G09G3/3208 ,  G09G2310/0297 ,  G09G2320/0247 ,  G09G2330/021 ,  G09G2340/0435 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5209 ,  H01L51/5225 ,  H01L2227/323

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

Abstract translation: 本公开涉及在相同基板上具有两种不同类型的薄膜晶体管的薄膜晶体管基板和使用其的显示器。 所公开的显示装置可以包括基板，包括在基板上具有多晶半导体材料的第一半导体层的第一薄膜晶体管，以及包括在基板上包括氧化物半导体材料的第二半导体层的第二薄膜晶体管。 第一半导体层和第二半导体层都可以直接设置在相同的下层上。