Abstract:
When using a flexible substrate to protect and support various components of an organic light emitting display device, among components including driving elements disposed on each of pixels of the organic light emitting display device, components where a high-level signal is applied during an emission period are grouped and are disposed on one side of the pixels. Further, components where a low-level signal is applied during the emission period are grouped and are disposed on the other side of the pixels. Accordingly, an electric field occurring due to a potential difference in the flexible substrate is minimized and shifting of a threshold voltage Vth of a thin-film transistor may be minimized. Thus, an OLED without an after-image can be provided.
Abstract:
When using a flexible substrate to protect and support various components of an organic light emitting display device, among components including driving elements disposed on each of pixels of the organic light emitting display device, components where a high-level signal is applied during an emission period are grouped and are disposed on one side of the pixels. Further, components where a low-level signal is applied during the emission period are grouped and are disposed on the other side of the pixels. Accordingly, an electric field occurring due to a potential difference in the flexible substrate is minimized and shifting of a threshold voltage Vth of a thin-film transistor may be minimized. Thus, an OLED without an after-image can be provided.
Abstract:
A thin film transistor and a method for fabricating the same are disclosed. The thin film transistor includes: a gate electrode formed on a substrate and having a plurality of horizontal electrode parts spaced apart at regular intervals; a gate insulating film formed over the entire surface of the substrate including the gate electrode; an active pattern formed on the gate insulating film above the plurality of horizontal electrode parts; an etch stop film pattern formed above the active pattern and the gate insulating film so as to overlap top portions of the active pattern and the gate electrode and; a source electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of adjacent horizontal electrode parts; and a drain electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of horizontal electrode parts located on the outermost ends.
Abstract:
An organic light emitting diode (OLED) display device can include a gate line including a gate electrode; an active layer over the gate line with a gate insulating layer interposed therebetween and including an amorphous zinc oxide semiconductor; a first protective layer over color filters on an insulating layer over first source and drain electrodes; second source and drain electrodes on the first protective layer and connected to the first source and drain electrodes; a second protective layer having a third contact hole; a pixel electrode on the second protective layer and connected to the second drain electrode through the third contact hole; a partition partitioning the pixel region; and an organic light emitting layer over the partition. Also, the gate electrode is located to cover a lower portion of the active layer and the second source electrode is extended to cover the channel region of the active layer.
Abstract:
An organic light emitting diode (OLED) display device in which an oxide-based semiconductor is used as an active layer of a TFT and the fabrication method thereof are provided. In the OLED display device, the active layer is formed at an upper portion of the gate electrode and a source electrode is patterned to completely cover the channel region of the active layer, to block light introduced from upper and lower portions of the active layer, thereby improving reliability of the oxide TFT.