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    Display device comprising a plurality of thin film transistors and method for manufacturing the same
    5.
    发明授权
    Display device comprising a plurality of thin film transistors and method for manufacturing the same 有权

    公开(公告)号：US11177288B2

    公开(公告)日：2021-11-16

    申请号：US16661760

    申请日：2019-10-23

    Applicant: LG Display Co., Ltd.

    Inventor： Seungmin Lee

    IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  G11C19/28 ,  H01L29/66 ,  H01L27/32 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1368 ,  G09G3/3275 ,  G09G3/3258

    Abstract: A display device can include a pixel driver disposed on a substrate; and a display element electrically connected with the pixel driver, in which the pixel driver includes a first thin film including a first semiconductor layer, a first gate electrode, at least a part of the first gate electrode overlapping with the first semiconductor layer, and a first source electrode and a first drain electrode respectively connected with the first semiconductor layer; and a second thin film including a second semiconductor layer, a second gate electrode, at least a part of the second gate electrode overlapping with the second semiconductor layer, and a second source electrode and a second drain electrode respectively connected with the second semiconductor layer, in which the first semiconductor layer and the second semiconductor layer are disposed in different layers, and the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the second drain electrode are disposed in a same layer.

    THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME
    6.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME 有权
    薄膜晶体管衬底和包含该衬底的显示器件

    公开(公告)号：US20170005152A1

    公开(公告)日：2017-01-05

    申请号：US15197351

    申请日：2016-06-29

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Sungki HONG ,  Byungyong Ahn ,  Sangkug Han ,  Seungmin Lee ,  Yujin Choi ,  Sunghoon Hong ,  Youngwoon Yoon

    IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/3248 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/3232 ,  H01L27/3237 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78648

    Abstract: A thin-film transistor substrate and a display device comprising the same are provided which can improve display quality by reducing or preventing deterioration of the characteristics of thin-film transistors. The thin-film transistor substrate comprises thin-film transistors on a lower protective metal layer. Each thin-film transistor comprises a buffer layer, a semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a source electrode and a drain electrode, and a first electrode. The lower protective metal layer is electrically connected to the gate electrode and overlaps the channel region of the semiconductor layer.

    Abstract translation: 提供了一种薄膜晶体管基板和包括该薄膜晶体管基板的显示装置，其可以通过减少或防止薄膜晶体管的特性劣化来提高显示质量。 薄膜晶体管衬底包括在下保护金属层上的薄膜晶体管。 每个薄膜晶体管包括缓冲层，半导体层，第一绝缘膜，栅电极，第二绝缘膜，源电极和漏电极以及第一电极。 下保护金属层电连接到栅电极并与半导体层的沟道区重叠。

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