公开(公告)号：US11946142B2

公开(公告)日：2024-04-02

申请号：US17633942

申请日：2020-08-06

Applicant: Lam Research Corporation

Inventor： Fayaz A. Shaikh ,  Adriana Vintila ,  Matthew Mudrow ,  Nick Ray Linebarger, Jr. ,  Xin Yin ,  James F. Lee ,  Brian Joseph Williams

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/44 ,  C23C16/458 ,  C23C16/509

CPC classification number: C23C16/4585 ,  C23C16/042 ,  C23C16/4409 ,  C23C16/45521 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45597 ,  C23C16/509

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

公开(公告)号：US20220298632A1

公开(公告)日：2022-09-22

申请号：US17633942

申请日：2020-08-06

Applicant: Lam Research Corporation

Inventor： Fayaz A. Shaikh ,  Adriana Vintila ,  Matthew Mudrow ,  Nick Ray Linebarger, Jr. ,  Xin Yin ,  James F. Lee ,  Brian Joseph Williams

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/509

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

公开(公告)号：US20250118592A1

公开(公告)日：2025-04-10

申请号：US18730257

申请日：2023-01-18

Applicant: Lam Research Corporation

Inventor： Nick Ray Linebarger, Jr. ,  Richard M. Blank ,  Daniel Boatright ,  Fayaz A. Shaikh ,  Eric Thomas Dixon ,  Michael John Janicki ,  Adriana Vintila ,  Xin Yin ,  Conor Charles Arcuri

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/68

Abstract: Semiconductor processing tools with wafer back-side processing capabilities are disclosed. Such tools may be configured to only contact wafers being processed through edge contact, as opposed to underside/planar contact. Such tools may also include wafer-centering features that may allow such wafers to be precisely centered with regard to a particular wafer processing station thereof.

公开(公告)号：US20240167161A1

公开(公告)日：2024-05-23

申请号：US18427348

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Fayaz A. Shaikh ,  Adriana Vintila ,  Matthew Mudrow ,  Nick Ray Linebarger, JR. ,  Xin Yin ,  James F. Lee ,  Brian Joseph Williams

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/4585 ,  C23C16/042 ,  C23C16/4409 ,  C23C16/45521 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45597 ,  C23C16/509

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes a showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer.