公开(公告)号：US20210126167A1

公开(公告)日：2021-04-29

申请号：US16698978

申请日：2019-11-28

Applicant: Lextar Electronics Corporation

Inventor： Chang-Zhi ZHONG ,  Hung-Chia WANG ,  Hung-Chun TONG ,  Yu-Chun LEE ,  Tzong-Liang TSAI

IPC: H01L33/50 ,  H01L33/06 ,  H01L31/0216 ,  C09K11/64 ,  C09K11/02 ,  C09K11/77

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

公开(公告)号：US20200373467A1

公开(公告)日：2020-11-26

申请号：US16687634

申请日：2019-11-18

Applicant: Lextar Electronics Corporation

Inventor： Chang-Zhi ZHONG ,  Hung-Chun TONG ,  Yu-Chun LEE ,  Tzong-Liang TSAI

IPC: H01L33/50 ,  H01L33/06 ,  H01L33/44 ,  H01L33/56

Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

公开(公告)号：US20200127171A1

公开(公告)日：2020-04-23

申请号：US16203568

申请日：2018-11-28

Applicant: Lextar Electronics Corporation

Inventor： Hung-Chun TONG ,  Chang-Zhi ZHONG ,  Fu-Hsin CHEN ,  Yu-Chun LEE

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/20 ,  H01L33/00

Abstract: A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.