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1.
公开(公告)号:US20240150652A1
公开(公告)日:2024-05-09
申请号:US18498271
申请日:2023-10-31
发明人: Pei Cong YAN , Chia-Chun HSIEH , Huei Ping WANG , Hung-Chun TONG , Yu-Chun LEE
CPC分类号: C09K11/883 , C09K11/025 , H01L33/502 , B82Y20/00
摘要: The disclosure relates to a quantum dot structure. The quantum dot structure includes a quantum dot and a cloud-like shell covering a portion of the quantum dot and having an irregular outer surface. The quantum dot includes: a core; a first shell discontinuously around a core surface of the core; and a second shell between the core and the first shell and encapsulating the core surface of the core, wherein the second shell has an irregular outer surface.
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2.
公开(公告)号:US20240363810A1
公开(公告)日:2024-10-31
申请号:US18517401
申请日:2023-11-22
发明人: Lu-Ching WANG , Pei Cong YAN , Hung-Chun TONG , Yu-Chun LEE
IPC分类号: H01L33/50
CPC分类号: H01L33/502
摘要: A light-conversion material and a light-emitting device and a display device including the same are provided. The light-conversion material is represented by formula (I): MmDdAaCcEeGg:Rr (I). Wherein M is Ca, Sr, or Ba; D is Zn, Cd, or a combination thereof; A is B, Al, or Ga; C is Si; E is O, S, or Se; G is N, P, As, Sb, or Bi; and R is Eu, Sm, or Yb. The formula (I) is satisfied by 0.5≤m≤2; 1≤d≤4; 0≤a≤2; 0.1≤c≤3.5; 0.1≤e≤4; 0.5≤g≤5.5; and 0.1≤r≤1.
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公开(公告)号:US20240124350A1
公开(公告)日:2024-04-18
申请号:US18486426
申请日:2023-10-13
发明人: Ching LIU , Wen-Tse HUANG , Ru-Shi LIU , Pei Cong YAN , Chai-Chun HSIEH , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
IPC分类号: C03C14/00 , C03B19/10 , C03C4/12 , C03C12/00 , C03C17/245 , C03C17/25 , C03C17/34 , C23C16/40 , C23C16/44 , C23C16/455
CPC分类号: C03C14/006 , C03B19/1005 , C03C4/12 , C03C12/00 , C03C17/245 , C03C17/25 , C03C17/3417 , C23C16/402 , C23C16/403 , C23C16/4417 , C23C16/45553 , C23C16/45555 , B82Y20/00 , C03C2204/00 , C03C2214/16
摘要: A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.
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公开(公告)号:US20240128414A1
公开(公告)日:2024-04-18
申请号:US18482331
申请日:2023-10-06
发明人: Shiou-Yi KUO , Chin-Hung LUNG , Yu-Chun LEE , Hung-Chun TONG
IPC分类号: H01L33/50 , H01L25/075
CPC分类号: H01L33/507 , H01L25/0753 , H01L33/502 , H01L2933/0041
摘要: A light-emitting device is provided. The light-emitting device includes a light-emitting unit and a light-conversion structure disposed on the light-emitting unit, wherein the light-conversion structure includes a quantum dot layer and an etching blocking layer disposed on one of the surfaces of the quantum dot layer.
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公开(公告)号:US20230279291A1
公开(公告)日:2023-09-07
申请号:US17816077
申请日:2022-07-29
发明人: Pei Cong YAN , Chai Chun HSIEH , Huei Ping WANG , Hung-Chun TONG , Yu-Chun LEE
CPC分类号: C09K11/025 , C09K11/883 , H01L33/502 , B82Y20/00
摘要: A quantum dot is disclosed. The quantum dot includes: a core, a first shell, and a second shell. The first shell is discontinuously distributed around the core surface. The second shell is between the core and the first shell and encapsulates the core. The second shell has an irregularly shaped outer surface.
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公开(公告)号:US20200127171A1
公开(公告)日:2020-04-23
申请号:US16203568
申请日:2018-11-28
发明人: Hung-Chun TONG , Chang-Zhi ZHONG , Fu-Hsin CHEN , Yu-Chun LEE
摘要: A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.
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公开(公告)号:US20220029067A1
公开(公告)日:2022-01-27
申请号:US17083329
申请日:2020-10-29
发明人: Yi-Ting TSAI , Hung-Chia WANG , Chia-Chun HSIEH , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
IPC分类号: H01L33/50
摘要: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.
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8.
公开(公告)号:US20210288227A1
公开(公告)日:2021-09-16
申请号:US17033699
申请日:2020-09-26
发明人: Yi-Ting TSAI , Hung-Chia WANG , Chia-Chun HSIEH , Hung-Chun TONG , Yu-Chun LEE , Tzong-Liang TSAI
摘要: The wavelength conversion material includes a general formula (I) MmAaBbCcDdEe:ESxREy and satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements O, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.
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公开(公告)号:US20210143133A1
公开(公告)日:2021-05-13
申请号:US16699091
申请日:2019-11-28
发明人: Hung-Chun TONG , Fu-Hsin CHEN , Wen-Wan TAI , Yu-Chun LEE , Tzong-Liang TSAI
IPC分类号: H01L25/075 , H01L33/58 , H01L33/52
摘要: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.
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公开(公告)号:US20210126167A1
公开(公告)日:2021-04-29
申请号:US16698978
申请日:2019-11-28
摘要: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.
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