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    LIGHT EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    LIGHT EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200127171A1

    公开(公告)日：2020-04-23

    申请号：US16203568

    申请日：2018-11-28

    Applicant: Lextar Electronics Corporation

    Inventor： Hung-Chun TONG ,  Chang-Zhi ZHONG ,  Fu-Hsin CHEN ,  Yu-Chun LEE

    IPC: H01L33/50 ,  H01L33/60 ,  H01L33/20 ,  H01L33/00

    Abstract: A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.

    PIXEL STRUCTURE
    8.
    发明申请
    PIXEL STRUCTURE 审中-公开

    公开(公告)号：US20190131342A1

    公开(公告)日：2019-05-02

    申请号：US16171334

    申请日：2018-10-25

    Applicant: Lextar Electronics Corporation

    Inventor： Yi-Jyun CHEN ,  Li-Cheng YANG ,  Yu-Chun LEE ,  Shiou-Yi KUO ,  Chih-Hao LIN

    IPC: H01L27/15 ,  H01L33/50 ,  H01L33/38 ,  H01L33/08 ,  H01L33/52 ,  H01L25/075

    Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

    LIGHT EMITTING DIODE PACKAGE STRUCTURE
    9.
    发明申请
    LIGHT EMITTING DIODE PACKAGE STRUCTURE 有权
    发光二极管封装结构

    公开(公告)号：US20140361323A1

    公开(公告)日：2014-12-11

    申请号：US14149051

    申请日：2014-01-07

    Applicant: Lextar Electronics Corporation

    Inventor： Li-Cheng YANG ,  Yu-Chun LEE

    IPC: H01L33/50 ,  H01L33/58

    CPC classification number: H01L33/58 ,  G02F1/15 ,  G02F1/157 ,  G02F2001/1515 ,  G02F2202/04 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: A LED package structure includes a base portion, a light-emitting chip, a cup portion and an encapsulating glue. The base portion has an upper surface and a lower surface. The upper surface has a die-bonding area. The light-emitting chip emits a light with a first wavelength and is located on the die-bonding area. The cup portion is located on the base portion to surround the die-bonding area to form a recess having an opening. The encapsulating glue is filled into the recess. The encapsulating glue has a wavelength conversion material configured to convert part of the light with the first wavelength into a light with a second wavelength. The cup portion includes an electro chromic layer electrically connected to a first external power and a transmittance of the electro chromic layer is changed in accordance with an input voltage of the first external power to adjust the light-emitting profile of the light-emitting chip.

    Abstract translation: LED封装结构包括基部，发光芯片，杯部和封装胶。 基部具有上表面和下表面。 上表面具有芯片接合区域。 发光芯片发射具有第一波长的光并且位于芯片接合区域上。 杯部位于基部上以围绕芯片接合区域以形成具有开口的凹部。 封装胶被填充到凹槽中。 封装胶具有被配置为将具有第一波长的光的一部分转换成具有第二波长的光的波长转换材料。 杯部包括电连接到第一外部电源的电致铬层，并且根据第一外部电源的输入电压改变电致发光层的透射率，以调节发光芯片的发光轮廓。

    LIGHT-EMITTING DIODE DEVICE
    10.
    发明申请
    LIGHT-EMITTING DIODE DEVICE 有权

    公开(公告)号：US20220029067A1

    公开(公告)日：2022-01-27

    申请号：US17083329

    申请日：2020-10-29

    Applicant: Lextar Electronics Corporation

    Inventor： Yi-Ting TSAI ,  Hung-Chia WANG ,  Chia-Chun HSIEH ,  Hung-Chun TONG ,  Yu-Chun LEE ,  Tzong-Liang TSAI

    IPC: H01L33/50

    Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

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