公开(公告)号：US06541384B1

公开(公告)日：2003-04-01

申请号：US09657391

申请日：2000-09-08

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  John White

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  John White

IPC分类号： H01L2100

CPC分类号： C09G1/02

摘要： The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.

摘要翻译： 本发明提供了一种用于平坦化铜的化学机械抛光组合物和使用该组合物平坦化或起始铜的平面化的方法。 化学机械抛光组合物包括氧化剂和铜（II）化合物。 组合物任选地包括一种或多种以下化合物类型：络合剂; 腐蚀抑制剂; 酸; 和磨料。 在一个实施方案中，氧化剂是过氧化氢，硝酸铁或碘酸盐。 在另一个实施方案中，铜（II）化合物是CuSO 4。 化学机械抛光方法包括使用包含氧化剂和铜（II）化合物的组合物抛光铜层的步骤。 组合物以各种方式形成。 在一个实施方案中，其通过将铜（II）化合物加入到含有氧化剂的溶液和任何所包含的任选化合物类型的去离子水中而形成。 在另一个实施方案中，其通过在去离子水中将含有铜（II）化合物的溶液在去离子水中加入到含有氧化剂和任何所包含的任选化合物类型的溶液中而形成。

公开(公告)号：US06709316B1

公开(公告)日：2004-03-23

申请号：US09698864

申请日：2000-10-27

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

IPC分类号： B24B700

CPC分类号： C09G1/02 ,  H01L21/7684

摘要： A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.

摘要翻译： 一种用于平坦化其上设置有阻挡层的衬底表面的方法和组合物。 在一个方面，本发明提供了平面化具有阻挡层和设置在其上的含铜材料的衬底表面，包括化学机械抛光衬底以选择性地去除过量的含铜材料，化学机械抛光衬底以选择性地去除剩余的含铜材料，以及 阻挡层的一部分，以及化学机械抛光衬底以选择性地去除残留阻挡层。

公开(公告)号：US20060166487A1

公开(公告)日：2006-07-27

申请号：US11393999

申请日：2006-03-30

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

公开(公告)号：US06669538B2

公开(公告)日：2003-12-30

申请号：US09512745

申请日：2000-02-24

申请人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

发明人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

IPC分类号： B24B100

CPC分类号： B24B53/017

摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

摘要翻译： 本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。 在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。 喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。 该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

公开(公告)号：US20080045021A1

公开(公告)日：2008-02-21

申请号：US11923276

申请日：2007-10-24

申请人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stan Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： H01L21/461

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

摘要翻译： 提供了通过化学机械抛光技术去除阻挡层材料的组合物和方法。 一方面，本发明提供一种组合物，其适于在化学机械抛光技术中除去阻挡层材料，该技术包括至少一种选自二羧酸，三羧酸及其组合的还原剂，至少一种还原剂，其选自 该组葡萄糖，羟胺及其组合以及去离子水，其中所述组合物具有约7或更低的pH。 组合物可以用于除去阻挡层材料的方法，包括将组合物施加到抛光垫上，并在组合物存在下抛光基底以除去阻挡层。

公开(公告)号：US20050282380A1

公开(公告)日：2005-12-22

申请号：US10972191

申请日：2004-10-22

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： B24B37/04 ,  B24B49/16 ,  H01L21/321 ,  H01L21/768 ,  H01L21/00 ,  B24B49/00 ,  B24B51/00 ,  H01L21/4763

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。

公开(公告)号：US07022608B2

公开(公告)日：2006-04-04

申请号：US10419440

申请日：2003-04-21

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

IPC分类号： H01L21/302

CPC分类号： C09G1/02

摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

公开(公告)号：US06858540B2

公开(公告)日：2005-02-22

申请号：US10215521

申请日：2002-08-08

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  Fred C. Redeker

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li ,  Fred C. Redeker

IPC分类号： B24B1/00 ,  C09K13/00 ,  C11D1/00 ,  H01L21/285 ,  H01L21/302 ,  H01L21/321 ,  H01L21/768

CPC分类号： H01L21/3212 ,  H01L21/28568 ,  H01L21/7684

摘要： A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.

摘要翻译： 一种用于进行化学机械抛光/平面化的方法，其提供从工件表面高度选择性地快速去除含Ta阻挡层，例如包括嵌入在介电层中的镶嵌型Cu基金属化图案的半导体晶片 并且包括含Ta的金属扩散阻挡层，包括在CMP期间将水性液体组合物施加到工件表面或用于执行CMP的抛光垫，所述组合物包含至少一种还原剂以将过渡金属离子还原成低级 价态，至少一种pH调节剂，至少一种金属腐蚀抑制剂和水，并且任选地包括至少一种过渡金属（例如Cu和Fe离子）的离子。 根据另一个实施方案，含水液体组合物含有Ag离子，并且省略了至少一种还原剂。

公开(公告)号：US06524167B1

公开(公告)日：2003-02-25

申请号：US09698863

申请日：2000-10-27

申请人： Stan Tsai ,  Lizhong Sun ,  Shijian Li

发明人： Stan Tsai ,  Lizhong Sun ,  Shijian Li

IPC分类号： B24B100

CPC分类号： C09G1/02

摘要： A method and composition for selective removal of a conductive material residue and a portion of the barrier layer from a substrate surface. The composition includes a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. The method comprises selective removal of conductive material residue and a portion of the barrier layer from a substrate surface by applying a composition to a polishing pad, the composition including a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. In one aspect, the method comprises providing a substrate comprising a dielectric layer with feature definitions formed therein, a barrier layer conformally deposited on the dielectric layer and in the feature definitions formed therein, and a copper containing material deposited on the barrier layer and filling the feature definitions formed therein, polishing the substrate to substantially remove the conductive material, and polishing the substrate with a composition comprising a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water to remove conductive material residue and a portion of the barrier layer.

摘要翻译： 用于从衬底表面选择性去除导电材料残余物和阻挡层的一部分的方法和组合物。 组合物包括螯合剂，氧化剂，缓蚀剂，磨料颗粒和水。 该组合物还可包含一种或多种pH调节剂和/或一种或多种pH缓冲剂。 该方法包括通过将组合物施加到抛光垫上来从基材表面选择性地除去导电材料残余物和阻挡层的一部分，该组合物包括螯合剂，氧化剂，腐蚀抑制剂，磨料颗粒和水。 该组合物还可包含一种或多种pH调节剂和/或一种或多种pH缓冲剂。 在一个方面，该方法包括提供包括其中形成有特征定义的电介质层的基底，保形地沉积在电介质层上和在其中形成的特征定义中的阻挡层和沉积在阻挡层上的含铜材料， 在其中形成的特征定义，抛光基底以基本上去除导电材料，并用包含螯合剂，氧化剂，腐蚀抑制剂，磨料颗粒和水的组合物抛光基底以除去导电材料残余物和一部分屏障 层。

公开(公告)号：US20060144825A1

公开(公告)日：2006-07-06

申请号：US11368839

申请日：2006-03-06

申请人： Stand Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

发明人： Stand Tsai ,  Shijian Li ,  Feng Liu ,  Lizhong Sun ,  Liang-Yuh Chen

IPC分类号： C09K13/00 ,  C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  C23F1/00

CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.