公开(公告)号：US11074975B1

公开(公告)日：2021-07-27

申请号：US16841711

申请日：2020-04-07

Applicant: MACRONIX International Co., Ltd.

Inventor： Chun-Lien Su ,  Ming-Shang Chen

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/08 ,  H01L27/1157 ,  H01L27/11524

Abstract: A non-volatile register is provided. The non-volatile register includes a plurality of cell strings with respect to a plurality of bit lines, wherein each cell string includes a plurality of cells. Each word line is respectively connecting to a gate of one cell for each cell string to correspondingly form a page. The pages are configured into: a central page used as a register to store registered data; and a plurality of dummy pages at both sides of the central page. The dummy pages are controlled to provide a boosted channel voltage to a portion of memory cells of the central page, not being programmed. A source selection transistor is connected to a first side for each cell string. A drain selection transistor is connected to a second side for each cell string.

公开(公告)号：US20140050006A1

公开(公告)日：2014-02-20

申请号：US14063284

申请日：2013-10-25

Applicant: MACRONIX International Co., Ltd.

Inventor： Kuan-Fu Chen ,  Yin-Jen Chen ,  Tzung-Ting Han ,  Ming-Shang Chen

IPC: G11C17/16

CPC classification number: G11C17/16 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/101

Abstract: A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.

Abstract translation: 一次可编程存储器阵列包括在第一行方向上延伸并且设置在第一高度的第一行导体，在第二行方向上延伸并设置在第二高度的第二行导体和沿列方向延伸的列导体 并且设置成与第一行导体相邻并且与第二行导体相邻。 阵列还包括覆盖列导体的至少一部分的电介质层，耦合在列导体上的电介质层和第二行导体之间的熔丝链。

公开(公告)号：USRE46970E1

公开(公告)日：2018-07-24

申请号：US15207201

申请日：2016-07-11

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Kuan-Fu Chen ,  Yin-Jen Chen ,  Tzung-Ting Han ,  Ming-Shang Chen

IPC: G11C17/06 ,  G11C17/16 ,  H01L21/822 ,  H01L27/10 ,  H01L27/06

CPC classification number: G11C17/16 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/101

Abstract: A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.

公开(公告)号：US09036393B2

公开(公告)日：2015-05-19

申请号：US14063284

申请日：2013-10-25

Applicant: MACRONIX International Co., Ltd.

Inventor： Kuan-Fu Chen ,  Yin-Jen Chen ,  Tzung-Ting Han ,  Ming-Shang Chen

IPC: G11C17/06 ,  G11C17/16 ,  H01L21/822 ,  H01L27/10 ,  H01L27/06

CPC classification number: G11C17/16 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/101

Abstract: A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.