公开(公告)号：US10153263B2

公开(公告)日：2018-12-11

申请号：US14861933

申请日：2015-09-22

Applicant: MACRONIX International Co., Ltd.

Inventor： Chin-Cheng Yang ,  Chia-Hua Lin ,  Chih-Hao Huang

IPC: H01L27/02 ,  H01L29/06 ,  G06F17/50

Abstract: A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row including the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows. The separate patterns in at least one column including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns.

公开(公告)号：US20160196968A1

公开(公告)日：2016-07-07

申请号：US14590526

申请日：2015-01-06

Applicant: MACRONIX International Co., Ltd.

Inventor： Chia-Hua Lin ,  Tien-Chu Yang ,  Chih-Hao Huang

IPC: H01L21/027 ,  G03F7/32 ,  G03F7/38 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/094 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0271 ,  H01L21/0273

Abstract: A patterning method is provided. A photoresist layer is formed on a target layer. An etching resistance layer is formed on the photoresist layer. The photoresist layer is exposed to light and therefore a photo acid is generated in first regions of the photoresist layer. The photoresist layer is developed to remove second regions of the photoresist layer. It is noted that the etching resistance layer is non-photosensitive but reactive to the generated photo acid.

Abstract translation: 提供了图案化方法。 在目标层上形成光致抗蚀剂层。 在光致抗蚀剂层上形成耐蚀性层。 光致抗蚀剂层暴露于光，因此在光致抗蚀剂层的第一区域中产生光酸。 显影光致抗蚀剂层以除去光致抗蚀剂层的第二区域。 注意，耐蚀刻层是非光敏的，但对所产生的光酸具有反应性。

公开(公告)号：US20170084597A1

公开(公告)日：2017-03-23

申请号：US14861933

申请日：2015-09-22

Applicant: MACRONIX International Co., Ltd.

Inventor： Chin-Cheng Yang ,  Chia-Hua Lin ,  Chih-Hao Huang

IPC: H01L27/02 ,  G06F17/50 ,  H01L29/06

CPC classification number: H01L27/0207 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70616 ,  G06F17/5072 ,  H01L29/0657

Abstract: A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row including the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows. The separate patterns in at least one column including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns.