公开(公告)号：US20140162458A1

公开(公告)日：2014-06-12

申请号：US13712820

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Ranjan Khurana ,  Anton J. DeVillers ,  Kevin J. Torek ,  Shane J. Trapp ,  Scott L. Light ,  James M. Buntin

IPC: H01L21/308 ,  H01L21/302

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.

Abstract translation: 在衬底上形成图案的方法包括在衬底的材料中形成开口。 开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔的柱。 公开了其他实施例。

公开(公告)号：US08889558B2

公开(公告)日：2014-11-18

申请号：US13712820

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Anton J. deVillers ,  Kevin J. Torek ,  Shane J. Trapp ,  Scott L. Light ,  James M. Buntin

IPC: H01L21/308 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.

Abstract translation: 在衬底上形成图案的方法包括在衬底的材料中形成开口。 开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔柱。 公开了其他实施例。